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4 Diodes & Rectifiers 109

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
NRVHP420LFST1G by Onsemi

NRVHP420LFST1G

Onsemi

NRVHP420LFST1G by Onsemi is a single rectifier diode with ultra-fast soft recovery power, featuring a max reverse recovery time of 0.05 us and a max output current of 4A. With a package style of small outline and matte tin terminal finish, it is ideal for applications requiring high-speed switching capabilities in temperatures ranging from -55 to 175 °C.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PSSO-G4

e3

1

125 A

1

1

4

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

.5 uA

.05 us

200 V

YES

MATTE TIN

GULL WING

SINGLE

30

NRVHP820LFST1G by Onsemi

NRVHP820LFST1G

Onsemi

NRVHP820LFST1G by Onsemi is a single diode with 200V reverse test voltage, 0.035us max reverse recovery time, and 1uA max reverse current. Ideal for ultra-fast soft recovery power applications. Package style: small outline, surface mountable with matte tin terminal finish.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1 V

R-PSSO-G4

e3

1

175 A

1

1

4

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

1 uA

.035 us

200 V

YES

MATTE TIN

GULL WING

SINGLE

30

GB2X100MPS12-227 by Genesic Semiconductor

GB2X100MPS12-227

Genesic Semiconductor

GB2X100MPS12-227 by Genesic Semiconductor is a Schottky rectifier diode with 1200V peak reverse voltage and 228A output current. It has a max power dissipation of 1554W, making it suitable for high-efficiency applications. With silicon carbide material, this diode operates b/w -55°C to 175°C, ideal for demanding environments.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

640 A

2

1

4

175 Cel

-55 Cel

228 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

1554 W

1200 V

50 uA

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

STPS240H100TV1Y by STMicroelectronics

STPS240H100TV1Y

STMicroelectronics

STMicroelectronics STPS240H100TV1Y is a Schottky rectifier diode with 2 elements, max reverse voltage of 100V, and max output current of 120A. Ideal for power applications, it operates b/w -40 to 175°C with isolated case connection.

POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.825 V

R-PUFM-X4

1150 A

2

1

4

175 Cel

-40 Cel

120 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

AEC-Q101

100 V

90 uA

100 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

MSC2X31SDA170J by Microchip Technology

MSC2X31SDA170J

Microchip Technology

MSC2X31SDA170J by Microchip is a Schottky rectifier diode with 1700V reverse test voltage and 30A max output current. It is designed for high voltage applications, operates b/w -55 to 175 °C, and features a plastic/epoxy package body material.

LOW LEAKAGE CURRENT, FREE WHEELING DIODE, SNUBBER DIODE

HIGH VOLTAGE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

2

1

4

175 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

1700 V

200 uA

1700 V

YES

SCHOTTKY

UNSPECIFIED

UPPER

MSC2X51SDA170J by Microchip Technology

MSC2X51SDA170J

Microchip Technology

MSC2X51SDA170J by Microchip Technology is a Schottky rectifier diode with 1700V reverse test voltage and 200uA max reverse current. It has a max output current of 50A, making it ideal for high voltage applications. The package style is flange mount with isolated case connection, suitable for operating temperatures from -55 to 175°C.

FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT

HIGH VOLTAGE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

2

1

4

175 Cel

-55 Cel

50 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

1700 V

200 uA

1700 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

LSIC2SD120N80PA by Littelfuse

LSIC2SD120N80PA

Littelfuse

LSIC2SD120N80PA by Littelfuse is a fast recovery rectifier diode with 1200V reverse test voltage, 75A output current, and 516W power dissipation. Ideal for applications requiring high efficiency and reliability in a wide temperature range from -55 to 175°C.

PD-CASE

FAST RECOVERY

1200 V

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

300 A

2

1

4

175 Cel

-55 Cel

75 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

516 W

1200 V

100 uA

1200 V

NO

UNSPECIFIED

UPPER

LSIC2SD120N120PA by Littelfuse

LSIC2SD120N120PA

Littelfuse

LSIC2SD120N120PA by Littelfuse is a Schottky rectifier diode with 120A output current, 1.8V forward voltage, and 1200V reverse voltage. Ideal for applications requiring high power dissipation up to 880W in isolated case connections at temperatures ranging from -55°C to 175°C.

PD-CASE

GENERAL PURPOSE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-XUFM-X4

440 A

2

1

4

175 Cel

-55 Cel

120 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

880 W

1200 V

100 uA

1200 V

YES

SCHOTTKY

UNSPECIFIED

UPPER

LSIC2SD120N40PA by Littelfuse

LSIC2SD120N40PA

Littelfuse

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST RECOVERY

1200 V

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

145 A

2

1

4

175 Cel

-55 Cel

42 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

314 W

1200 V

100 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

VS-U5FX240FA120 by Vishay Intertechnology

VS-U5FX240FA120

Vishay Intertechnology

VS-U5FX240FA120 by Vishay Intertechnology is a diode with 2 elements, max reverse recovery time of 0.06 us, and max reverse current of 160 uA. It is used for efficiency applications, operates b/w -55 to 175 °C, and has a max power dissipation of 611 W.

PD-CASE

EFFICIENCY

1200 V

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

3.33 V

R-PUFM-X4

690 A

2

1

4

175 Cel

-55 Cel

120 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

611 W

1200 V

160 uA

.06 us

1200 V

NO

UNSPECIFIED

UPPER

GD2X75MPS17N by Genesic Semiconductor

GD2X75MPS17N

Genesic Semiconductor

GD2X75MPS17N by Genesic Semiconductor is a Schottky rectifier diode with 1700V reverse test voltage and 115A output current. It has a max power dissipation of 1112W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures superior performance in a wide temperature range from -55 to 175°C.

PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

750 A

2

1

4

175 Cel

-55 Cel

115 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

1112 W

1700 V

10 uA

1700 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD2X30MPS12N by Genesic Semiconductor

GD2X30MPS12N

Genesic Semiconductor

GD2X30MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 49A output current. It has a max power dissipation of 382W, making it suitable for high-efficiency applications. With silicon carbide diode element material, it operates b/w -55°C to 175°C efficiently.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

300 A

2

1

4

175 Cel

-55 Cel

49 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

382 W

1200 V

10 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD2X100MPS12N by Genesic Semiconductor

GD2X100MPS12N

Genesic Semiconductor

GD2X100MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 136A output current. It has a max power dissipation of 940W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures reliable performance in temperatures ranging from -55 to 175°C.

PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

1000 A

2

1

4

175 Cel

-55 Cel

136 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

940 W

1200 V

25 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER