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GD2X100MPS12N

Genesic Semiconductor

GD2X100MPS12N by Genesic Semiconductor

GD2X100MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 136A output current. It has a max power dissipation of 940W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures reliable performance in temperatures ranging from -55 to 175°C.

Median Price

$71.470

Lifecycle Status

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Arrow

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$66.990

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$66.290

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40

$71.470

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$66.290

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Verical

USA . 40 parts In-Stock

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$71.470

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$66.990

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$66.290

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$66.290

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AZTECH Wire

Italy . 222 parts In-Stock

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Microchip USA

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Overview

Experience the next level of efficiency with the GD2X100MPS12N by Genesic Semiconductor. This high-quality diode & rectifier boasts superior performance and reliability, making it the ideal choice for a wide range of applications. With a maximum output current of 136 A and a maximum power dissipation of 940 W, this product offers exceptional value and benefits to customers looking to enhance their systems. Trust Genesic Semiconductor for cutting-edge technology and innovative solutions that deliver unmatched results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Current: 25 uA

Low reverse current ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 175 °C

Can operate effectively in high temperature environments, increasing versatility.

Maximum Power Dissipation: 940 W

High power dissipation capability makes it suitable for high-power applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification, ensuring reliable conversion of AC to DC.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching capabilities for efficient operation.

Maximum Output Current: 136 A

High output current rating allows for handling of large electrical loads.

Technical Specifications

Diodes & Rectifiers GD2X100MPS12N attributes and parameters. Explore more Diodes & Rectifiers devices from Genesic Semiconductor

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

1000 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

136 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

940 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

25 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

GD2X100MPS12N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Genesic Semiconductor

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2022.

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