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GD2X30MPS12N

Genesic Semiconductor

GD2X30MPS12N by Genesic Semiconductor

GD2X30MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 49A output current. It has a max power dissipation of 382W, making it suitable for high-efficiency applications. With silicon carbide diode element material, it operates b/w -55°C to 175°C efficiently.

Median Price

$33.890

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 473 parts In-Stock

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$27.760

100+ parts

$21.060

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473

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Mouser Electronics

USA . 206 parts In-Stock

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$33.890

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$28.570

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$27.610

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206

$33.890

$28.570

$27.610

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Element14

Singapore . 512 parts In-Stock

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$37.751

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512

$37.751

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DigiKey

USA . 71 parts In-Stock

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Vyrian

USA . 2,385 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Continental Prestige Electronics

USA . 533 parts In-Stock

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$23.920

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$20.570

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533

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Argo Parts USA

USA . 2,826 parts In-Stock

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2,826

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Experience unparalleled efficiency and reliability with the GD2X30MPS12N by Genesic Semiconductor. This cutting-edge diode rectifier offers superior performance in a wide range of applications, thanks to its advanced technology and high-quality construction. With a maximum reverse voltage of 1200V and a maximum output current of 49A, this product is designed to optimize power delivery while ensuring long-lasting durability. Trust Genesic Semiconductor for top-notch semiconductor solutions that deliver exceptional value and benefits to all customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for various applications.

Maximum Reverse Current: 10 uA

With a low maximum reverse current of 10 uA, this product ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows the diodes and rectifiers to withstand elevated temperatures without compromising performance.

Diode Type: RECTIFIER DIODE

The diodes in this product are specifically designed as rectifier diodes, making them suitable for converting AC to DC power efficiently.

Maximum Forward Voltage (VF): 1.8 V

With a low maximum forward voltage of 1.8 V, this product minimizes voltage drop during operation, ensuring efficient power conversion.

Technical Specifications

Diodes & Rectifiers GD2X30MPS12N attributes and parameters. Explore more Diodes & Rectifiers devices from Genesic Semiconductor

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

49 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

382 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

GD2X30MPS12N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Genesic Semiconductor

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2022.

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