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NRVHP820LFST1G

Onsemi

NRVHP820LFST1G by Onsemi

NRVHP820LFST1G by Onsemi is a single diode with 200V reverse test voltage, 0.035us max reverse recovery time, and 1uA max reverse current. Ideal for ultra-fast soft recovery power applications. Package style: small outline, surface mountable with matte tin terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,869 parts In-Stock

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Digiode

USA . 1,609 parts In-Stock

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1,609

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Microchip USA

USA . 8,357 parts In-Stock

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$3.919

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$3.919

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Component Stockers USA

USA . 3,530 parts In-Stock

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$9.730

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$9.730

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AZTECH Wire

Italy . 512 parts In-Stock

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$10.820

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512

$10.820

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QUARKTWIN TECHNOLOGY LTD

USA . 25,854 parts In-Stock

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Problanco Electronics

Mexico . 6,565 parts In-Stock

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Kulean Microsystems

USA . 2,421 parts In-Stock

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SupplyDigital Components

Austria . 2,192 parts In-Stock

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UHIMA Technologies

Türkiye . 692 parts In-Stock

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TANS Electronics

Latvia . 670 parts In-Stock

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Corphita

USA . 660 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Discover the superior quality and reliability of the NRVHP820LFST1G by Onsemi, a leading manufacturer in the industry. As part of the Diodes & Rectifiers category, this product offers ultra-fast soft recovery power for various applications. With a maximum output current of 8A and a maximum reverse recovery time of 0.035 us, this diode ensures optimal performance in challenging conditions. Trust in Onsemi's innovative technology to deliver exceptional value and efficiency, making the NRVHP820LFST1G the ideal choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the diode lightweight and durable.

Maximum Reverse Recovery Time: 0.035 us

The ultra fast reverse recovery time ensures efficient and quick operation of the diode.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop of 1V helps in minimizing power losses and increasing efficiency.

Maximum Output Current: 8 A

With a high output current of 8A, this diode can handle heavy loads with ease.

Application: ULTRA FAST SOFT RECOVERY POWER

The diode is designed for ultra fast soft recovery power applications, making it suitable for high-speed circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and ensures reliable connections.

Reverse Test Voltage: 200 V

With a reverse test voltage of 200V, this diode can be used in applications requiring high voltage protection.

Technical Specifications

Diodes & Rectifiers NRVHP820LFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

175 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP820LFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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