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NRVHP420MFDWFT3G

Onsemi

NRVHP420MFDWFT3G by Onsemi

NRVHP420MFDWFT3G by Onsemi is a diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.03 us and max output current of 2 A. With a package style of small outline and peak reflow temperature of 260 °C, it is ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 5,000 parts In-Stock

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Verical

USA . 5,000 parts In-Stock

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$0.168

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Chip1Stop

Japan . 5,000 parts In-Stock

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Digiode

USA . 1,250 parts In-Stock

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Vyrian

USA . 5,285 parts In-Stock

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Corphita

USA . 2,160 parts In-Stock

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$0.152

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Corohmni

South Africa . 344 parts In-Stock

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AZTECH Wire

Italy . 196 parts In-Stock

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$9.080

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Kulean Microsystems

USA . 6,320 parts In-Stock

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Problanco Electronics

Mexico . 3,755 parts In-Stock

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SupplyDigital Components

Austria . 3,143 parts In-Stock

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TANS Electronics

Latvia . 786 parts In-Stock

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UHIMA Technologies

Türkiye . 643 parts In-Stock

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Overview

Discover the NRVHP420MFDWFT3G by Onsemi, a top-quality diode and rectifier designed for ultra fast recovery power applications. With a reliable manufacturer like Onsemi behind it, this product ensures superior performance and durability. Perfect for various electronic devices, this diode offers a maximum output current of 2A and a maximum forward voltage of 1.1V, making it an essential component for any project requiring efficient power management. Upgrade your electronics with the NRVHP420MFDWFT3G and experience the benefits of high-quality components that deliver exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protects the diodes from external elements, making them suitable for a wide range of applications.

Config: SEPARATE, 2 ELEMENTS

Separate configuration with 2 elements allows for better control and efficiency in managing the flow of current, enhancing the performance of the diodes.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying the assembly process.

Maximum Reverse Recovery Time: 0.03 us

Ultra-fast reverse recovery time of 0.03 us ensures quick switching and minimal power loss, making this diode ideal for high-speed applications.

Maximum Reverse Current: 0.5 uA

Low reverse current of 0.5 μA results in improved efficiency and reduced power consumption, making this diode suitable for energy-efficient designs.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment on the PCB, optimizing space utilization and facilitating assembly.

No. of Terminals: 6

6 terminals provide flexible connection options and enable precise control over the electrical properties of the diode.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space, making it suitable for compact designs and high-density PCB layouts.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, this diode offers efficient and reliable performance in high-speed circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175 °C ensures stable operation in harsh environments, increasing the versatility of this diode.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55 °C allows for operation in cold environments without compromising performance.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides excellent solderability and ensures reliable electrical connections, enhancing the overall quality and longevity of the diode.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and facilitates easy integration into different circuit configurations.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and reduces the likelihood of errors during installation, improving overall reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30 seconds minimizes the risk of thermal damage during soldering, ensuring the long-term stability of the diode.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C enables efficient and reliable soldering, ensuring strong mechanical and electrical connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive-grade standard ensures the diode's reliability and durability in demanding automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC power, making this diode suitable for rectification and power management applications.

Maximum Forward Voltage (VF): 1.1 V

Low maximum forward voltage drop of 1.1V reduces power loss and improves energy efficiency, making this diode ideal for power-sensitive applications.

Maximum Output Current: 2 A

High maximum output current of 2A allows for handling of heavy loads and ensures reliable performance in power distribution circuits.

Terminal Form: FLAT

Flat terminal form provides stable and secure connections, minimizing the risk of disconnection and ensuring consistent electrical properties.

No. of Elements: 2

Having 2 elements enhances the diode's functionality and performance, allowing for more precise control over the flow of current.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage of 200V ensures reliable operation in high-voltage applications, making this diode suitable for diverse power supply designs.

Maximum Non Repetitive Peak Forward Current: 40 A

High maximum non-repetitive peak forward current of 40A enables handling of short-term high-power surges, improving the diode's reliability in transient conditions.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and low power loss, providing reliable performance in a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NRVHP420MFDWFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.03 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP420MFDWFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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