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NRVHPRS1KFA

Onsemi

NRVHPRS1KFA by Onsemi

NRVHPRS1KFA by Onsemi is a single diode rectifier with a max reverse recovery time of 0.5 us and a max forward voltage of 1.3 V. It is commonly used in applications requiring high efficiency, such as power electronics.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.194

100+ parts

$0.177

1k+ parts

$0.159

10k+ parts

-

50

$0.194

$0.177

$0.159

-

Mouser Electronics

USA . 2,970 parts In-Stock

1+ parts

$0.550

100+ parts

$0.269

1k+ parts

$0.183

10k+ parts

$0.133

2,970

$0.550

$0.269

$0.183

$0.133

Rochester

USA . 254,000 parts In-Stock

1+ parts

-

100+ parts

$0.157

1k+ parts

$0.131

10k+ parts

$0.117

254,000

-

$0.157

$0.131

$0.117

Verical

USA . 254,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.146

254,000

-

-

-

$0.146

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 419 parts In-Stock

1+ parts

$0.123

100+ parts

-

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419

$0.123

-

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.168

100+ parts

-

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450

$0.168

-

-

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Vyrian

USA . 102,168 parts In-Stock

1+ parts

-

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102,168

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Flip Electronics

USA . 2,700 parts In-Stock

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2,700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 102,412 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

-

10k+ parts

-

102,412

$0.110

-

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Semicontronic

India . 102,315 parts In-Stock

1+ parts

$0.110

100+ parts

$0.107

1k+ parts

$0.107

10k+ parts

-

102,315

$0.110

$0.107

$0.107

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Corphita

USA . 2,317 parts In-Stock

1+ parts

$0.116

100+ parts

-

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-

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2,317

$0.116

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Corohmni

South Africa . 259 parts In-Stock

1+ parts

$0.129

100+ parts

-

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-

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259

$0.129

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.168

100+ parts

$0.165

1k+ parts

-

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-

2,000

$0.168

$0.165

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Continental Prestige Electronics

USA . 876 parts In-Stock

1+ parts

$0.168

100+ parts

-

1k+ parts

-

10k+ parts

$0.165

876

$0.168

-

-

$0.165

Argo Parts USA

USA . 375 parts In-Stock

1+ parts

$0.168

100+ parts

-

1k+ parts

-

10k+ parts

$0.163

375

$0.168

-

-

$0.163

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.194

100+ parts

$0.177

1k+ parts

$0.159

10k+ parts

-

50

$0.194

$0.177

$0.159

-

Aztec Data Supply Inc.

USA . 4,946 parts In-Stock

1+ parts

$0.195

100+ parts

-

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4,946

$0.195

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SupplyDigital Components

Austria . 6,588 parts In-Stock

1+ parts

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6,588

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Problanco Electronics

Mexico . 5,394 parts In-Stock

1+ parts

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5,394

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Kulean Microsystems

USA . 3,509 parts In-Stock

1+ parts

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3,509

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TANS Electronics

Latvia . 133 parts In-Stock

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133

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UHIMA Technologies

Türkiye . 15 parts In-Stock

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15

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Overview

Discover the NRVHPRS1KFA by Onsemi, a high-quality diode and rectifier that offers exceptional value and benefits to customers. Manufactured by Onsemi, a trusted leader in the industry, this product brings reliability and efficiency to various applications. With a maximum reverse recovery time of just 0.5 us and a maximum forward voltage of 1.3 V, this rectifier diode is perfect for optimizing performance and energy savings. Its small outline package shape and surface mount configuration make it easy to integrate into any design. Experience the advantages of the NRVHPRS1KFA and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY. The use of a plastic/epoxy package body material provides durability and resistance to external factors, making this diode a reliable choice.

Config

SINGLE. The single configuration of this diode simplifies its installation and reduces the complexity of circuitry designs, making it easy to integrate into various electronic devices.

Surface Mount

YES. Being surface mountable, this diode offers convenience during the assembly process, allowing for efficient production and reliable solder connections.

Maximum Reverse Recovery Time

0.5 us. With a fast reverse recovery time, this diode ensures quick switching capabilities, reducing power loss and improving efficiency in applications.

Maximum Reverse Current

5 uA. The low maximum reverse current value ensures minimal leakage, resulting in improved energy efficiency and enhanced overall performance.

Package Shape

RECTANGULAR. The rectangular package shape simplifies the mounting process and allows for space-efficient integration, making it suitable for compact electronic designs.

Reverse Test Voltage

800 V. With a high reverse test voltage, this diode provides robust protection against reversed voltages, making it ideal for applications requiring reliable voltage regulation.

No. of Terminals

2. The presence of only two terminals simplifies the connectivity and installation process, making it easier to incorporate this diode in various electrical circuits.

Package Style (Meter)

SMALL OUTLINE. The small outline package style enables space-saving designs, making it suitable for devices with limited physical space while maintaining high performance.

Application

EFFICIENCY. This diode is specifically designed for efficiency applications, ensuring optimal energy conversion and minimizing power loss.

Maximum Operating Temperature

150 °C. With a high maximum operating temperature, this diode can withstand demanding environmental conditions, ensuring reliable operation in various temperature ranges.

Minimum Operating Temperature

55 °C. The low minimum operating temperature allows this diode to function reliably even in extremely cold environments, expanding its range of applications.

Terminal Finish

Matte Tin (Sn) - annealed. The matte tin terminal finish enhances solderability and provides a stable connection, ensuring the diode's durability and long-term performance.

Terminal Position

DUAL. The dual terminal position makes it easier to connect and integrate this diode into circuits, providing versatility and flexibility during installation.

Maximum Time At Peak Reflow Temperature (s)

30. This diode can withstand peak reflow temperatures for up to 30 seconds, allowing for efficient assembly processes without compromising its performance.

Peak Reflow Temperature °C

260. The high peak reflow temperature ensures reliable soldering during the assembly process, ensuring a secure connection and optimal performance.

Reference Standard

AEC-Q101. Complying with the AEC-Q101 standard, this diode guarantees high-quality, automotive-grade performance, making it suitable for automotive applications.

Diode Type

RECTIFIER DIODE. As a rectifier diode, this product efficiently converts alternating current (AC) to direct current (DC), making it an essential component for power supply applications.

Maximum Forward Voltage (VF)

1.3 V. With a low maximum forward voltage, this diode minimizes voltage drops, resulting in higher efficiency and reduced power dissipation.

Maximum Output Current

0.8 A. The high maximum output current capability of this diode allows it to handle higher power demands, making it suitable for a wide range of applications.

Terminal Form

FLAT. The flat terminal form ensures ease of soldering and improves mechanical stability, contributing to the diode's reliability during operation.

Maximum Repetitive Peak Reverse Voltage

800 V. With a high maximum repetitive peak reverse voltage, this diode provides excellent reverse voltage protection, making it suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current

30 A. The high maximum non-repetitive peak forward current capability allows this diode to handle brief high current surges, enhancing its reliability in challenging conditions.

Diode Element Material

SILICON. The use of silicon as the diode element material provides excellent electrical properties, allowing for efficient current flow and ensuring optimal performance in various applications.

Technical Specifications

Diodes & Rectifiers NRVHPRS1KFA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.5 us

Reverse Test Voltage:

800 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHPRS1KFA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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