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NRVHP160SFT3G

Onsemi

NRVHP160SFT3G by Onsemi

NRVHP160SFT3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and a max reverse current of 2 uA. It has a package style of small outline, making it suitable for efficiency applications in temperatures ranging from -65 to 175 °C.

Median Price

$0.590

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 285 parts In-Stock

1+ parts

$0.590

100+ parts

$0.263

1k+ parts

$0.164

10k+ parts

$0.139

285

$0.590

$0.263

$0.164

$0.139

DigiKey

USA . 5,454 parts In-Stock

1+ parts

$0.600

100+ parts

$0.262

1k+ parts

$0.177

10k+ parts

$0.138

5,454

$0.600

$0.262

$0.177

$0.138

Rochester

USA . 1,750 parts In-Stock

1+ parts

-

100+ parts

$0.153

1k+ parts

$0.127

10k+ parts

$0.113

1,750

-

$0.153

$0.127

$0.113

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,810 parts In-Stock

1+ parts

$0.446

100+ parts

-

1k+ parts

-

10k+ parts

-

1,810

$0.446

-

-

-

Vyrian

USA . 165 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

165

$0.470

-

-

-

ComSIT Distribution GmbH

Germany . 274,815 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

274,815

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 8,343 parts In-Stock

1+ parts

$0.390

100+ parts

$0.230

1k+ parts

$0.140

10k+ parts

$0.110

8,343

$0.390

$0.230

$0.140

$0.110

Corphita

USA . 386 parts In-Stock

1+ parts

$0.423

100+ parts

-

1k+ parts

-

10k+ parts

-

386

$0.423

-

-

-

Corohmni

South Africa . 427 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

427

$0.470

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

SupplyDigital Components

Austria . 4,928 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,928

-

-

-

-

Problanco Electronics

Mexico . 4,725 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,725

-

-

-

-

Kulean Microsystems

USA . 3,620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,620

-

-

-

-

TANS Electronics

Latvia . 3,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,440

-

-

-

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UHIMA Technologies

Türkiye . 417 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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417

-

-

-

-

Overview

Enhance the efficiency of your electronic devices with the NRVHP160SFT3G by Onsemi. Crafted with precision and quality, this rectifier diode offers a reliable solution for a variety of applications. From small outline packaging to dual terminals, this product ensures ease of installation and operation. With a maximum reverse recovery time of 0.05 us and a maximum forward voltage of 3.8 V, customers can expect optimal performance and longevity. Trust in Onsemi's expertise in diodes and rectifiers to deliver value and benefits that exceed expectations. Elevate your projects with the NRVHP160SFT3G and experience the difference in efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time enhances efficiency and performance of the diode.

Maximum Reverse Current: 2 uA

Low reverse current ensures minimal power loss and improved efficiency.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for versatile applications in different environments.

Maximum Output Current: 1 A

Capable of handling high output currents for various power requirements.

Technical Specifications

Diodes & Rectifiers NRVHP160SFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, SOFT FACTOR IS 0.8

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.8 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

15 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP160SFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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