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NRVHP820MFDT1G

Onsemi

NRVHP820MFDT1G by Onsemi

NRVHP820MFDT1G by Onsemi is a diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.028 us, max forward voltage of 1.09 V, and max output current of 4 A. Ideal for use in electronics operating b/w -55 to 175 °C, this diode is designed with a small outline package style for surface mount applications.

Median Price

$0.858

Lifecycle Status

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10

In-Stock Inventory

1k+

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Arrow

USA . 957 parts In-Stock

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$0.265

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Mouser Electronics

USA . 937 parts In-Stock

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$1.840

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$0.697

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937

$1.840

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DigiKey

USA . 1,352 parts In-Stock

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$1.850

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$0.765

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$0.747

10k+ parts

$0.662

1,352

$1.850

$0.765

$0.747

$0.662

Rochester

USA . 1,500 parts In-Stock

1+ parts

-

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$0.827

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$0.687

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$0.612

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$0.827

$0.687

$0.612

Verical

USA . 1,500 parts In-Stock

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$0.858

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$0.765

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$0.858

$0.765

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USA . 1,500 parts In-Stock

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Chip1Stop

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Digiode

USA . 1,711 parts In-Stock

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$0.257

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Vyrian

USA . 1,591 parts In-Stock

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$0.271

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Flip Electronics

USA . 1,500 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.106

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$0.096

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$0.087

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60

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$0.087

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Corphita

USA . 493 parts In-Stock

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$0.244

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Corohmni

South Africa . 287 parts In-Stock

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$0.271

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Microchip USA

USA . 3,322 parts In-Stock

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$4.225

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Perfect Parts

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

Austria . 4,602 parts In-Stock

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TANS Electronics

Latvia . 3,029 parts In-Stock

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GreenTree Electronics

Israel . 1,390 parts In-Stock

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iodParts Technologies Inc.

India . 1,290 parts In-Stock

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UHIMA Technologies

Türkiye . 782 parts In-Stock

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Overview

Enhance your power applications with the NRVHP820MFDT1G from Onsemi, a leading manufacturer in the industry. This diode offers ultra-fast recovery power with a maximum reverse recovery time of 0.028 us, ensuring reliable performance. With a maximum output current of 4A and a maximum forward voltage of 1.09V, this diode is perfect for high-power systems. Its small outline package design allows for easy integration into your projects. Trust Onsemi's reputation for quality and innovation to bring value and efficiency to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes and rectifiers, ensuring a longer lifespan for the product.

Maximum Reverse Recovery Time: 0.028 us

Ultra fast recovery time allows for efficient and rapid switching, making this product suitable for high-speed applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for various industrial and automotive applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring reliable and efficient conversion of AC to DC.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can handle high reverse voltages, making it suitable for use in power supply circuits and voltage regulation.

Technical Specifications

Diodes & Rectifiers NRVHP820MFDT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.09 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.028 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP820MFDT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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