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NRVHP820MFDT3G

Onsemi

NRVHP820MFDT3G by Onsemi

NRVHP820MFDT3G by Onsemi is a diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.028 us and max output current of 4A. With a package style of small outline and peak reflow temperature of 260 °C, it is ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

$0.268

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,000 parts In-Stock

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$0.268

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$0.268

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Verical

USA . 5,000 parts In-Stock

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$0.268

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Chip1Stop

Japan . 5,000 parts In-Stock

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Digiode

USA . 2,215 parts In-Stock

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$0.260

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Vyrian

USA . 4,649 parts In-Stock

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Corphita

USA . 1,262 parts In-Stock

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$0.247

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Corohmni

South Africa . 219 parts In-Stock

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$0.274

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219

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Microchip USA

USA . 104 parts In-Stock

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$4.466

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104

$4.466

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AZTECH Wire

Italy . 755 parts In-Stock

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$22.190

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755

$22.190

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Problanco Electronics

Mexico . 5,487 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 1,801 parts In-Stock

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Kulean Microsystems

USA . 699 parts In-Stock

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TANS Electronics

Latvia . 615 parts In-Stock

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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Overview

Discover the NRVHP820MFDT3G by Onsemi, a high-quality rectifier diode that offers ultra fast recovery power for a wide range of applications. With a maximum output current of 4A and a maximum repetitive peak reverse voltage of 200V, this diode is designed for optimal performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, you can trust that this product delivers superior quality and value. Whether you're working on automotive electronics or industrial machinery, the NRVHP820MFDT3G provides the efficiency and durability you need to power your projects with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Config: SEPARATE, 2 ELEMENTS

Allows for independent operation of each element, providing flexibility in circuit design.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.028 us

Enables fast switching speeds, ideal for ultra fast recovery power applications.

Maximum Reverse Current: 0.5 uA

Ensures low leakage current, enhancing efficiency and reliability of the circuit.

Package Shape: RECTANGULAR

Fits well within standard PCB layouts, making it easy to integrate into existing designs.

No. of Terminals: 6

Offers multiple connection points for increased flexibility in circuit configuration.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for high-density mounting of components.

Application: ULTRA FAST RECOVERY POWER

Specifically designed for high-speed power applications where fast recovery times are critical.

Maximum Operating Temperature: 175 °C

Ensures reliable performance in a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Allows for operation in extreme cold environments without sacrificing performance.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a durable and corrosion-resistant finish for the terminals, ensuring long-term reliability.

Terminal Position: DUAL

Allows for easy connection and mounting of the diode in different circuit configurations.

Case Connection: CATHODE

Clearly defines the polarity of the diode, simplifying circuit design and installation.

Peak Reflow Temperature °C: 260

Withstands high temperatures during soldering processes, ensuring proper connections.

Reference Standard: AEC-Q101

Compliance with automotive industry standards for reliability and performance in harsh environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification and power conversion applications.

Maximum Forward Voltage (VF): 1.09 V

Low forward voltage drop minimizes power losses and improves efficiency of the circuit.

Maximum Output Current: 4 A

Capable of handling high current loads, suitable for various power applications.

Terminal Form: FLAT

Facilitates easy soldering and connection to the PCB, ensuring strong and reliable electrical connections.

No. of Elements: 2

Provides redundancy and increased current capacity for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Withstands high reverse voltages, suitable for power supply and protection circuits.

Maximum Non Repetitive Peak Forward Current: 80 A

Capable of handling short-term high current surges, ideal for power transients and overloads.

Diode Element Material: SILICON

High-quality silicon material ensures reliable and consistent performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers NRVHP820MFDT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.09 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.028 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP820MFDT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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