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NRVHP220SFT3G

Onsemi

NRVHP220SFT3G by Onsemi

NRVHP220SFT3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and max output current of 2A. It operates efficiently in temperatures ranging from -65 to 175 °C, making it suitable for applications requiring high efficiency and reliability. The diode's small outline package with matte tin finish is ideal for surface mount assembly in various electronic devices.

Median Price

$0.256

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 16,776 parts In-Stock

1+ parts

$0.320

100+ parts

$0.232

1k+ parts

$0.186

10k+ parts

$0.161

16,776

$0.320

$0.232

$0.186

$0.161

Mouser Electronics

USA . 4,714 parts In-Stock

1+ parts

$0.320

100+ parts

$0.210

1k+ parts

$0.174

10k+ parts

$0.163

4,714

$0.320

$0.210

$0.174

$0.163

Newark

USA . 13,305 parts In-Stock

1+ parts

$0.593

100+ parts

$0.358

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$0.262

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-

13,305

$0.593

$0.358

$0.262

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Arrow

USA . 40,000 parts In-Stock

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$0.145

40,000

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$0.145

Verical

USA . 40,000 parts In-Stock

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$0.145

40,000

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$0.145

Rochester

USA . 10,000 parts In-Stock

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$0.193

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$0.160

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$0.143

10,000

-

$0.193

$0.160

$0.143

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.201

100+ parts

-

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100

$0.201

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Digiode

USA . 729 parts In-Stock

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$0.513

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729

$0.513

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Chip Stock

USA . 22,080 parts In-Stock

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Vyrian

USA . 21,927 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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$0.400

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Sensible Micro Corp

USA . 18,337 parts In-Stock

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Infinite Electronics LLP

India . 10,000 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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$0.252

10,000

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$0.252

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,150 parts In-Stock

1+ parts

$0.030

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$0.030

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Semicontronic

India . 21,139 parts In-Stock

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$0.129

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$0.126

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$0.125

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21,139

$0.129

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$0.125

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Corohmni

South Africa . 84 parts In-Stock

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$0.193

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84

$0.193

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Aranea Global

USA . 2,000 parts In-Stock

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$0.197

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$0.189

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$0.197

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$0.189

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Continental Prestige Electronics

USA . 2,537 parts In-Stock

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$0.201

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$0.197

2,537

$0.201

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$0.197

Argo Parts USA

USA . 143 parts In-Stock

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$0.201

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$0.195

143

$0.201

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$0.195

Ampacity Inc.

Singapore . 21,516 parts In-Stock

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$0.281

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Corphita

USA . 1,624 parts In-Stock

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$0.486

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Perfect Parts

USA . 99,624 parts In-Stock

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Infinite Electronics LLP (Excess)

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RC Electronics

USA . 36,000 parts In-Stock

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Kepictronics

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Lixinc

USA . 15,485 parts In-Stock

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Problanco Electronics

Mexico . 7,702 parts In-Stock

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SupplyDigital Components

Austria . 5,626 parts In-Stock

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TANS Electronics

Latvia . 3,683 parts In-Stock

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UHIMA Technologies

Türkiye . 915 parts In-Stock

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Kulean Microsystems

USA . 849 parts In-Stock

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Advanced Electronics

New Zealand . 74 parts In-Stock

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Overview

Discover the NRVHP220SFT3G by Onsemi, a top-quality rectifier diode that offers unparalleled efficiency for various applications. Manufactured with precision and expertise by Onsemi, this diode guarantees reliability and performance. With a maximum output current of 2A and a maximum forward voltage of 1.05V, this diode is perfect for high-power electronics. Whether you're looking to enhance the efficiency of your devices or improve overall performance, the NRVHP220SFT3G is the ideal solution. Trust Onsemi for cutting-edge technology that delivers exceptional value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good insulation and protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration makes it easy to manage and install in various applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time helps improve efficiency and performance of the diode.

Maximum Reverse Current: 0.5 uA

Low reverse current ensures minimal power loss and enhances overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and mounting of the diode in various electronic circuits.

No. of Terminals: 2

Dual terminals provide simple connection points for the diode in circuit designs.

Application: EFFICIENCY

Designed for efficiency applications, providing high performance and reliability.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for use in various environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in colder environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layouts and connections.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures stable and secure solder joints during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current in electronic circuits.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop helps minimize power losses and improve efficiency.

Maximum Output Current: 2 A

High output current capacity makes it suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

High voltage rating provides versatility for various voltage level requirements.

Maximum Non Repetitive Peak Forward Current: 40 A

High peak forward current capability for handling surge currents and transient events.

Diode Element Material: SILICON

Silicon material ensures good electrical conductivity and reliability for the diode.

Technical Specifications

Diodes & Rectifiers NRVHP220SFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP220SFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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