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NRVHP140SFT3G

Onsemi

NRVHP140SFT3G by Onsemi

NRVHP140SFT3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.04 us and max reverse current of 0.5 uA. It operates in temperatures ranging from -65 to 175 °C and has a peak reflow temperature of 260 °C, making it suitable for efficiency applications.

Median Price

$0.690

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 386 parts In-Stock

1+ parts

$0.690

100+ parts

$0.308

1k+ parts

$0.220

10k+ parts

$0.155

386

$0.690

$0.308

$0.220

$0.155

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,859 parts In-Stock

1+ parts

$0.542

100+ parts

-

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1,859

$0.542

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Vyrian

USA . 554 parts In-Stock

1+ parts

$0.570

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554

$0.570

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Flip Electronics

USA . 90,000 parts In-Stock

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90,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,104 parts In-Stock

1+ parts

$0.484

100+ parts

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6,104

$0.484

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Corphita

USA . 410 parts In-Stock

1+ parts

$0.513

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410

$0.513

-

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Corohmni

South Africa . 125 parts In-Stock

1+ parts

$0.570

100+ parts

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125

$0.570

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SupplyDigital Components

Austria . 6,801 parts In-Stock

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6,801

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Kulean Microsystems

USA . 6,484 parts In-Stock

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6,484

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

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6,000

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TANS Electronics

Latvia . 4,702 parts In-Stock

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4,702

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Problanco Electronics

Mexico . 3,896 parts In-Stock

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3,896

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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622

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Overview

Boost your electronic projects with the NRVHP140SFT3G by Onsemi. This high-quality rectifier diode offers superior efficiency and performance, making it perfect for a wide range of applications. With a maximum reverse test voltage of 400V and a maximum output current of 1A, this diode provides reliability and precision in your circuits. Trust in Onsemi's expertise and innovation to bring you top-notch components that deliver value and benefits to meet your needs. Elevate your projects with the NRVHP140SFT3G and experience the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan and reliability in various operating conditions.

Config: SINGLE

SINGLE configuration simplifies circuit design and installation process, making it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort in manufacturing processes.

Maximum Reverse Recovery Time: 0.04 us

Low reverse recovery time ensures fast and efficient switching, improving overall circuit performance and efficiency.

Maximum Reverse Current: 0.5 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode in reverse-biased conditions.

Package Shape: RECTANGULAR

Rectangular shape enables compact and space-saving designs, ideal for applications where size constraints are a consideration.

Peak Reflow Temperature: 260C

High peak reflow temperature tolerance allows for reliable soldering during PCB assembly processes, ensuring strong and durable connections.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product suitable for power supply applications.

Maximum Forward Voltage (VF): 1.4V

Low forward voltage drop minimizes power loss and heat generation, leading to higher efficiency in the circuit.

Maximum Output Current: 1A

High output current rating allows for handling of larger loads, making this diode suitable for various power supply and control applications.

Technical Specifications

Diodes & Rectifiers NRVHP140SFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, SOFT FACTOR IS 1.4

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.04 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP140SFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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