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STTH61R04TV2

STMicroelectronics

STTH61R04TV2 by STMicroelectronics

STTH61R04TV2 by STMicroelectronics is a fast recovery rectifier diode with 400V reverse test voltage, 0.065us reverse recovery time, and 30A max output current. Ideal for ultra-fast recovery applications, it operates b/w -65 to 150°C and features a matte tin terminal finish.

Median Price

$20.830

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 265 parts In-Stock

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$20.830

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$13.807

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265

$20.830

$13.807

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Mouser Electronics

USA . 63 parts In-Stock

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$20.830

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$13.610

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63

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$13.610

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Avnet

USA . 200 parts In-Stock

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200

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Digiode

USA . 4,334 parts In-Stock

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$18.838

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Vyrian

USA . 3,761 parts In-Stock

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3,761

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Anansix

USA . 1,436 parts In-Stock

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ComSIT Distribution GmbH

Germany . 101 parts In-Stock

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Pegasus Components GmbH

Germany . 90 parts In-Stock

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IDEA Electronic Components Group

UK . 417 parts In-Stock

1+ parts

$0.180

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$0.162

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417

$0.180

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$0.162

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MKK Technologies

India . 384 parts In-Stock

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$0.339

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384

$0.339

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DigiPath Technology Company

USA . 384 parts In-Stock

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$0.339

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Ampacity Inc.

Singapore . 204 parts In-Stock

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$9.930

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Corphita

USA . 3,265 parts In-Stock

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$17.847

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Component Stockers USA

USA . 109 parts In-Stock

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$20.300

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109

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Microchip USA

USA . 8,812 parts In-Stock

1+ parts

$52.260

100+ parts

$51.350

1k+ parts

$50.890

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$50.440

8,812

$52.260

$51.350

$50.890

$50.440

Parana Technologies

USA . 2,208 parts In-Stock

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$0.216

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Perfect Parts

USA . 622 parts In-Stock

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Kepictronics

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Eastek

USA . 30 parts In-Stock

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Overview

Unleash the power of ultra-fast recovery with the STTH61R04TV2 by STMicroelectronics. This high-quality rectifier diode offers superior performance and reliability, making it ideal for a wide range of applications. With a maximum reverse voltage of 400V and a forward current of 30A, this diode is designed to deliver exceptional results in demanding conditions. Trust STMicroelectronics, a leading manufacturer in the industry, to provide you with cutting-edge technology that exceeds your expectations. Choose the STTH61R04TV2 for your next project and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the diodes, ensuring durability and reliability.

Maximum Reverse Recovery Time: 0.065 us

The fast reverse recovery time allows for efficient switching and performance in high-speed applications.

Maximum Reverse Current: 150 uA

Low reverse current minimizes power loss and improves overall efficiency.

Reverse Test Voltage: 400 V

High reverse test voltage ensures robustness and reliability in various voltage applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for versatile use in different environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring optimal performance in power supply applications.

Technical Specifications

Diodes & Rectifiers STTH61R04TV2 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

150 uA

Maximum Reverse Recovery Time:

.065 us

Reverse Test Voltage:

400 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH61R04TV2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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