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STTH20004TV1

STMicroelectronics

STTH20004TV1 by STMicroelectronics

STTH20004TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.1 µs, handling up to 120 A output current. It operates b/w -55 °C and 150 °C, featuring a 400 V reverse test voltage. Ideal for applications requiring efficient power management in compact designs.

Median Price

$26.734

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 457 parts In-Stock

1+ parts

$21.080

100+ parts

$15.600

1k+ parts

-

10k+ parts

-

457

$21.080

$15.600

-

-

Mouser Electronics

USA . 298 parts In-Stock

1+ parts

$26.040

100+ parts

$18.940

1k+ parts

-

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298

$26.040

$18.940

-

-

DigiKey

USA . 49 parts In-Stock

1+ parts

$26.040

100+ parts

$15.803

1k+ parts

-

10k+ parts

-

49

$26.040

$15.803

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-

Verical

USA . 1 parts In-Stock

1+ parts

$27.428

100+ parts

$19.462

1k+ parts

$19.462

10k+ parts

$19.462

1

$27.428

$19.462

$19.462

$19.462

Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$36.500

100+ parts

-

1k+ parts

-

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-

1

$36.500

-

-

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Element14

Singapore . 507 parts In-Stock

1+ parts

$36.790

100+ parts

$27.210

1k+ parts

$26.670

10k+ parts

-

507

$36.790

$27.210

$26.670

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EBV Elektronik

Germany . 240 parts In-Stock

1+ parts

-

100+ parts

-

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240

-

-

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Distrelec

Netherlands . 4 parts In-Stock

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-

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-

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4

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-

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Distributors (In-Stock)

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Digiode

USA . 2,414 parts In-Stock

1+ parts

$25.754

100+ parts

-

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2,414

$25.754

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Vyrian

USA . 6,332 parts In-Stock

1+ parts

-

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6,332

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Anansix

USA . 884 parts In-Stock

1+ parts

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884

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

1+ parts

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6

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,040 parts In-Stock

1+ parts

$0.170

100+ parts

-

1k+ parts

$0.153

10k+ parts

-

1,040

$0.170

-

$0.153

-

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.191

100+ parts

$0.174

1k+ parts

$0.157

10k+ parts

-

350

$0.191

$0.174

$0.157

-

MKK Technologies

India . 2,159 parts In-Stock

1+ parts

$0.320

100+ parts

-

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2,159

$0.320

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DigiPath Technology Company

USA . 2,159 parts In-Stock

1+ parts

$0.320

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-

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2,159

$0.320

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Corphita

USA . 3,314 parts In-Stock

1+ parts

$24.399

100+ parts

-

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3,314

$24.399

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Continental Prestige Electronics

USA . 267 parts In-Stock

1+ parts

$25.380

100+ parts

$19.970

1k+ parts

-

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267

$25.380

$19.970

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Component Stockers USA

USA . 856 parts In-Stock

1+ parts

$25.650

100+ parts

$24.700

1k+ parts

-

10k+ parts

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856

$25.650

$24.700

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Microchip USA

USA . 8,540 parts In-Stock

1+ parts

$72.059

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8,540

$72.059

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GreenTree Electronics

Israel . 4,090 parts In-Stock

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4,090

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Authorized Procurement Solutions

USA . 2,300 parts In-Stock

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2,300

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Eastek

USA . 1,920 parts In-Stock

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Perfect Parts

USA . 840 parts In-Stock

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840

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Parana Technologies

USA . 829 parts In-Stock

1+ parts

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$0.204

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829

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$0.204

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Kepictronics

USA . 553 parts In-Stock

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553

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Cyclops Electronics Ltd (Excess)

UK . 6 parts In-Stock

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6

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Overview

Unlock the power of efficiency with the STTH20004TV1 from STMicroelectronics—a premier choice for high-voltage applications. Renowned for its quality, STMicroelectronics delivers exceptional reliability and innovation in every component. This ultra-fast recovery rectifier diode boasts impressive performance across a wide temperature range, perfect for demanding environments. Elevate your projects with advanced technology that ensures superior energy management and durability, enhancing every application from industrial to automotive settings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making it suitable for a variety of applications.

Config: SEPARATE, 2 ELEMENTS

The separate 2-element configuration allows for flexible circuit designs, increasing versatility in high-voltage applications.

Maximum Reverse Recovery Time: 0.1 us

A low reverse recovery time enhances efficiency and reduces power losses, making it ideal for high-speed switching applications.

Maximum Reverse Current: 1000 uA

Low reverse current minimizes leakage, which helps maintain performance and energy efficiency in sensitive applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on circuit boards, allowing for compact and efficient designs.

Reverse Test Voltage: 400 V

With a high reverse test voltage, this diode can withstand significant voltage stress, enhancing reliability in high-voltage applications.

No. of Terminals: 4

Four terminals provide additional connectivity options, improving installation flexibility and stability in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mounting facilitates secure positioning on heatsinks, enhancing thermal management and overall reliability.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high-voltage, ultra-fast recovery applications, this diode excels in demanding environments, ensuring superior performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures performance stability in extreme conditions, making it suitable for industrial applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for reliable performance in extremely cold environments, broadening application possibilities.

Terminal Finish: NICKEL

Nickel terminal finish enhances corrosion resistance and ensures better conductivity, resulting in improved device reliability.

Terminal Position: UPPER

Upper terminal position simplifies circuit design and layout, making integration into systems more straightforward.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents ground loops, crucial for sensitive high-voltage applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically engineered for converting AC to DC, making it a cornerstone component in power supply circuits.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop reduces power loss during conduction, boosting overall circuit efficiency.

Maximum Output Current: 120 A

Capable of handling 120 A of output current, this diode is ideal for high-current applications such as power electronics and motor drives.

No. of Elements: 2

Two diode elements allow for higher output and versatility in circuit design, making it suitable for various configurations.

Maximum Repetitive Peak Reverse Voltage: 400 V

With a high repetitive peak reverse voltage rating, this diode is well-suited for high-voltage switching applications.

Maximum Non-Repetitive Peak Forward Current: 900 A

The ability to handle 900 A of non-repetitive peak forward current allows for robust performance during transient events.

Diode Element Material: SILICON

Silicon diode elements provide excellent electrical characteristics, including high breakdown voltage and low leakage current.

Technical Specifications

Diodes & Rectifiers STTH20004TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

900 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

120 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

1000 uA

Maximum Reverse Recovery Time:

.1 us

Reverse Test Voltage:

400 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH20004TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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