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STTH12004TV1

STMicroelectronics

STTH12004TV1 by STMicroelectronics

STTH12004TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and a peak reverse voltage of 400 V. It operates efficiently in temperatures from -55 °C to 150 °C. With a robust design, it supports applications requiring rapid switching and high current handling up to 60 A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,198 parts In-Stock

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Anansix

USA . 2,453 parts In-Stock

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2,453

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Digiode

USA . 2,309 parts In-Stock

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IDEA Electronic Components Group

UK . 128 parts In-Stock

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$0.121

100+ parts

-

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$0.109

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128

$0.121

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$0.109

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MKK Technologies

India . 1,480 parts In-Stock

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$0.228

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1,480

$0.228

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DigiPath Technology Company

USA . 1,480 parts In-Stock

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$0.228

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1,480

$0.228

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AZTECH Wire

Italy . 1,193 parts In-Stock

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$14.100

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$14.100

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Component Stockers USA

USA . 521 parts In-Stock

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$99.990

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521

$99.990

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Corphita

USA . 4,441 parts In-Stock

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Parana Technologies

USA . 841 parts In-Stock

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$0.145

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841

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$0.145

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Kepictronics

USA . 553 parts In-Stock

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Overview

Unlock high-performance reliability with the STTH12004TV1 from STMicroelectronics, a leader in advanced semiconductor solutions. This ultra-fast recovery rectifier diode is expertly designed for high-voltage applications, ensuring minimal power loss and maximum efficiency. With its robust construction, it operates flawlessly across a wide temperature range, making it ideal for demanding environments. Choose STMicroelectronics for innovation that empowers your projects while enhancing durability and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the diode reliable in various applications.

Config: SEPARATE, 2 ELEMENTS

The dual-element configuration enhances performance by allowing for parallel operation, optimizing current handling capabilities.

Maximum Reverse Recovery Time: 0.09 us

This low reverse recovery time is crucial for high-frequency applications, reducing switching losses and improving efficiency.

Maximum Reverse Current: 500 uA

A low reverse current indicates minimal leakage in reverse mode, which is critical for high-efficiency circuit designs.

Package Shape: RECTANGULAR

The rectangular shape aids in effective mounting and provides favorable space for thermal management in design.

Reverse Test Voltage: 400 V

This high reverse test voltage ensures the diode can withstand significant reverse bias conditions, making it reliable for high voltage applications.

Number of Terminals: 4

Four terminals allow for versatile connection options in circuit designs, enhancing flexibility in integration.

Package Style (Meter): FLANGE MOUNT

The flange mount design facilitates easy installation and provides good mechanical stability, essential for reliable performance.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Ideal for high voltage applications, the ultra-fast recovery capability minimizes power losses, making it an excellent choice for power electronics.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures the diode can function effectively in demanding environments without failure.

Minimum Operating Temperature: -55 °C

The wide temperature range makes the diode suitable for harsh conditions and outdoor applications, enhancing its versatility.

Terminal Finish: NICKEL

Nickel finishing enhances the corrosion resistance of terminals, ensuring reliable and long-lasting electrical connections.

Terminal Position: UPPER

The upper terminal position simplifies integration into circuit boards, reducing complexity in designs.

Case Connection: ISOLATED

Isolated case connections minimize the risk of unwanted current paths, enhancing the safety and performance of the diode.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is suited for converting AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 1 V

A low forward voltage drop means higher efficiency during operation, allowing for reduced energy losses in the circuit.

Maximum Output Current: 60 A

The high output current rating supports demanding applications, making the diode suitable for power-intensive systems.

Number of Elements: 2

The presence of two elements allows for improved current management, balancing load and enhancing longevity.

Maximum Repetitive Peak Reverse Voltage: 400 V

This robust voltage handling capability ensures reliability in circuits exposed to high transient voltages.

Maximum Non-Repetitive Peak Forward Current: 600 A

Ability to handle peaks up to 600 A makes this diode resilient under sudden heavy loads, crucial for protection in power circuits.

Diode Element Material: SILICON

Silicon as the diode element material enhances thermal performance and reliability, essential for effective heat dissipation.

Technical Specifications

Diodes & Rectifiers STTH12004TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

600 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

60 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

500 uA

Maximum Reverse Recovery Time:

.09 us

Reverse Test Voltage:

400 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH12004TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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