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STTH9012TV1

STMicroelectronics

STTH9012TV1 by STMicroelectronics

STTH9012TV1 by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode. It features a max reverse recovery time of 0.125 µs, supports up to 1200 V reverse voltage, and operates b/w -65 °C to 150 °C. Ideal for demanding power applications.

Median Price

$27.340

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 161 parts In-Stock

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$27.340

100+ parts

$19.210

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161

$27.340

$19.210

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DigiKey

USA . 81 parts In-Stock

1+ parts

$27.340

100+ parts

$16.804

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-

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81

$27.340

$16.804

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EBV Elektronik

Germany . 80 parts In-Stock

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80

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Digiode

USA . 1,358 parts In-Stock

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$23.778

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1,358

$23.778

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TME

Poland . 10 parts In-Stock

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$28.230

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10

$28.230

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Anansix

USA . 2,851 parts In-Stock

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2,851

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Vyrian

USA . 2,573 parts In-Stock

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2,573

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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70

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Netsource Technology, Inc.

USA . 60 parts In-Stock

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60

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IDEA Electronic Components Group

UK . 1,820 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

$0.056

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1,820

$0.063

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$0.056

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MKK Technologies

India . 1,458 parts In-Stock

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$0.118

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1,458

$0.118

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DigiPath Technology Company

USA . 1,458 parts In-Stock

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$0.118

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1,458

$0.118

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Corphita

USA . 528 parts In-Stock

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$22.527

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528

$22.527

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Microchip USA

USA . 3,461 parts In-Stock

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$68.448

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3,461

$68.448

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A-Z Elektronik GmbH

Germany . 7,329 parts In-Stock

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7,329

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Parana Technologies

USA . 2,188 parts In-Stock

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$0.075

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2,188

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$0.075

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Kepictronics

USA . 553 parts In-Stock

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553

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Perfect Parts

USA . 175 parts In-Stock

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175

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Eastek

USA . 6 parts In-Stock

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6

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Overview

Unlock superior efficiency with the STTH9012TV1 from STMicroelectronics, a leader in semiconductor innovation. Designed for high voltage ultra-fast soft recovery applications, this diode ensures reliable performance even in extreme conditions, enhancing your systems’ durability. Experience outstanding reverse recovery times and elevated current handling capabilities, delivering unparalleled value that maximizes your project’s success while reducing downtime and operational costs. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent insulation and mechanical stability, making the diode reliable in various operating environments.

Config: SEPARATE, 2 ELEMENTS

The separate configuration with two elements allows for efficient thermal management and performance, enhancing overall device functionality.

Maximum Reverse Recovery Time: 0.125 us

A short reverse recovery time results in improved switching performance, making this diode ideal for high-speed applications.

Maximum Reverse Current: 300 uA

Low reverse current ensures reduced energy loss and enhances efficiency during operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into various circuit designs and optimizes space utilization.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable operation under high-voltage conditions, suitable for demanding applications.

No. of Terminals: 4

Four terminals provide flexibility in circuit design and facilitate better connectivity options.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure and stable mounting, improving heat dissipation and overall reliability.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage ultra-fast soft recovery applications, this diode is well-suited for power electronics and renewable energy systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this diode to function reliably in extreme thermal conditions.

Minimum Operating Temperature: -65 °C

This wide temperature range ensures operational stability even in cold environments, making it versatile for various applications.

Terminal Finish: NICKEL

Nickel terminal finish offers excellent corrosion resistance and enhances connectivity, promoting long-term reliability.

Terminal Position: UPPER

Upper terminal positioning provides easy access for connections and simplifies the design of PCB layouts.

Case Connection: ISOLATED

An isolated case connection helps prevent electrical cross-talk and enhances safety during operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is integral for converting AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 1.8 V

A low forward voltage drop ensures higher efficiency and reduced power loss during operation.

Maximum Output Current: 45 A

High output current rating allows this diode to handle substantial loads, suitable for demanding applications.

No. of Elements: 2

Two elements optimize performance and efficiency in rectification processes, enhancing overall effectiveness.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High peak reverse voltage capability allows this diode to withstand surges, ensuring durability in harsh electrical environments.

Maximum Non Repetitive Peak Forward Current: 420 A

The ability to handle high forward current surges makes this diode robust for transient conditions, ensuring reliability.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent electrical performance and thermal stability, enhancing device longevity.

Technical Specifications

Diodes & Rectifiers STTH9012TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

420 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

45 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

300 uA

Maximum Reverse Recovery Time:

.125 us

Reverse Test Voltage:

1200 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH9012TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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