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STTH120R04TV2

STMicroelectronics

STTH120R04TV2 by STMicroelectronics

STTH120R04TV2 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.08 µs and a peak reverse voltage of 400 V. It operates efficiently at temperatures from -65 °C to 150°C, handling up to 60 A. Ideal for high-speed switching applications, it features a flange mount design with four terminals.

Median Price

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6

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1k+

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Vyrian

USA . 12,785 parts In-Stock

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Anansix

USA . 1,541 parts In-Stock

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Digiode

USA . 1,196 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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ComSIT Distribution GmbH

Germany . 30 parts In-Stock

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ComSIT USA

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IDEA Electronic Components Group

UK . 554 parts In-Stock

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$0.030

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$0.027

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MKK Technologies

India . 1,475 parts In-Stock

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DigiPath Technology Company

USA . 1,475 parts In-Stock

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AZTECH Wire

Italy . 918 parts In-Stock

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Component Stockers USA

USA . 637 parts In-Stock

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$99.990

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Corphita

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Parana Technologies

USA . 2,267 parts In-Stock

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Overview

Unlock unparalleled performance with the STTH120R04TV2 diode from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for ultra-fast recovery applications, this robust component ensures reliability and efficiency, even under extreme conditions. With excellent thermal management and superior reverse voltage capabilities, it’s the ideal choice for demanding environments. Elevate your projects with a product that combines quality, performance, and enduring value, backed by ST's renowned expertise and support!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and protection against environmental factors, enhancing the diode's longevity and reliability in various applications.

Config: SEPARATE, 2 ELEMENTS

The separate 2-element configuration allows for flexible circuit design, enabling efficient use in a variety of applications.

Maximum Reverse Recovery Time: 0.08 µs

With a low reverse recovery time, this diode supports high-frequency applications, making it ideal for fast-switching power supplies and converters.

Maximum Reverse Current: 600 µA

The lower reverse current rating helps ensure minimal leakage, maximizing efficiency and reducing heat generation during operation.

Package Shape: RECTANGULAR

The rectangular package shape facilitates space-efficient layouts in electronic designs, optimizing PCB space.

Reverse Test Voltage: 400 V

A high reverse test voltage rating provides assurance of reliability and robustness in high-voltage applications.

Number of Terminals: 4

Having four terminals allows for versatile connections and improved positioning in circuit designs, enhancing performance.

Package Style (Meter): FLANGE MOUNT

The flange mount design ensures secure attachment to the PCB, providing mechanical stability and thermal conductivity.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is perfectly suited for applications requiring rapid switching and minimal energy losses.

Maximum Operating Temperature: 150 °C

The high operating temperature rating ensures reliable performance in demanding environments, making it suitable for industrial applications.

Minimum Operating Temperature: -65 °C

The ability to operate at very low temperatures allows this diode to be used in extreme conditions, broadening its application range.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: UPPER

Upper terminal positioning can optimize layout and enhance accessibility for circuit design, making installation easier.

Case Connection: ISOLATED

The isolated case connection improves safety and prevents unwanted electrical interference or short circuits in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential in power supply and rectification applications.

Maximum Forward Voltage (VF): 1.2 V

A relatively low forward voltage drop contributes to increased efficiency in power conversion and reduces heat generation.

Maximum Output Current: 60 A

The high output current capacity allows this diode to handle demanding applications and supports various power requirements.

Number of Elements: 2

Having two elements increases the versatility and reliability in various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 400 V

The capability to withstand high repetitive peak reverse voltage ensures robust performance in high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 700 A

A high non-repetitive peak forward current rating means this diode can tolerate surge events, providing additional protection during transient events.

Diode Element Material: SILICON

Silicon is widely recognized for its excellent electrical properties, ensuring good performance and reliability in various conditions.

Technical Specifications

Diodes & Rectifiers STTH120R04TV2 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

700 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

60 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

600 uA

Maximum Reverse Recovery Time:

.08 us

Reverse Test Voltage:

400 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH120R04TV2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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