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NHP620LFST1G

Onsemi

NHP620LFST1G by Onsemi

NHP620LFST1G by Onsemi is a single rectifier diode with a max reverse current of 0.75 uA and a max output current of 6 A. It operates in temperatures ranging from -55 to 175 °C and is ideal for ultra-fast soft recovery power applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,995 parts In-Stock

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Digiode

USA . 2,351 parts In-Stock

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Microchip USA

USA . 2,227 parts In-Stock

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$3.908

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Component Stockers USA

USA . 15,028 parts In-Stock

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$7.200

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AZTECH Wire

Italy . 886 parts In-Stock

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$19.090

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QUARKTWIN TECHNOLOGY LTD

USA . 29,575 parts In-Stock

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Kulean Microsystems

USA . 7,648 parts In-Stock

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TANS Electronics

Latvia . 4,300 parts In-Stock

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SupplyDigital Components

Austria . 4,231 parts In-Stock

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Problanco Electronics

Mexico . 2,576 parts In-Stock

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Corphita

USA . 2,454 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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Overview

Discover the NHP620LFST1G by Onsemi, a top-of-the-line diode & rectifier that guarantees high-quality performance and reliability. Manufactured by industry leader Onsemi, this product is designed for ultra fast soft recovery power applications. With a maximum reverse current of 0.75 uA and a maximum output current of 6 A, this diode offers exceptional value and benefits to customers looking for a reliable solution for their electronic circuits. Trust in the reputation of Onsemi and experience the advantages of the NHP620LFST1G in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for different environments and applications.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 0.75 uA

Ensures efficient performance and low power consumption.

Reverse Test Voltage: 200 V

Can withstand high reverse voltages without damage, ensuring reliable operation.

Maximum Operating Temperature: 175 °C

Suitable for use in high temperature environments, ensuring stability and reliability.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can handle high reverse voltages in repetitive conditions, making it suitable for various applications.

Diode Element Material: SILICON

Provides high conductivity and efficiency, ensuring optimal performance of the diode.

Technical Specifications

Diodes & Rectifiers NHP620LFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.75 uA

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NHP620LFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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