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NHP620MFDT3G

Onsemi

NHP620MFDT3G by Onsemi

NHP620MFDT3G by Onsemi is a diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.025 us and max output current of 3A. With a package style of small outline and matte tin terminal finish, it is suitable for applications requiring high-speed rectification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,439 parts In-Stock

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Digiode

USA . 2,068 parts In-Stock

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Ampacity Inc.

Singapore . 1,384 parts In-Stock

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$3.010

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$3.010

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AZTECH Wire

Italy . 975 parts In-Stock

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$14.800

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Problanco Electronics

Mexico . 6,834 parts In-Stock

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Kulean Microsystems

USA . 5,573 parts In-Stock

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SupplyDigital Components

Austria . 4,672 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,154 parts In-Stock

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Corphita

USA . 1,774 parts In-Stock

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TANS Electronics

Latvia . 1,564 parts In-Stock

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UHIMA Technologies

Türkiye . 387 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Overview

Discover the high-quality NHP620MFDT3G diode & rectifier by Onsemi, a leading manufacturer in the industry. This product offers ultra-fast recovery power for a wide range of applications, ensuring efficient performance and reliability. With a maximum output current of 3A and a maximum reverse recovery time of 0.025us, this diode provides exceptional value to customers seeking top-notch components for their projects. Trust Onsemi to deliver superior quality and performance with the NHP620MFDT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a longer lifespan and reliability in various operating conditions.

Maximum Reverse Recovery Time: 0.025 us

Ultra fast reverse recovery time allows for efficient switching performance, making this diode ideal for high-speed applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments, making it suitable for industrial and automotive applications.

Maximum Forward Voltage (VF): 1.09 V

Low forward voltage drop ensures energy efficiency and minimal power loss in electronic circuits.

Maximum Output Current: 3 A

Capable of handling high output currents, making it suitable for power supply and rectification applications.

Technical Specifications

Diodes & Rectifiers NHP620MFDT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.09 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.025 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NHP620MFDT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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