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STTH6102TV1

STMicroelectronics

STTH6102TV1 by STMicroelectronics

STTH6102TV1 from STMicroelectronics is a high-efficiency rectifier diode with a max reverse recovery time of 0.03 µs, handling up to 30 A output current. It operates in temperatures from -55 °C to 150 °C and features a 200 V reverse test voltage. Ideal for applications requiring reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,881 parts In-Stock

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6,881

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Digiode

USA . 2,624 parts In-Stock

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2,624

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Anansix

USA . 910 parts In-Stock

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910

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 424 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

$0.086

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424

$0.096

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$0.086

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MKK Technologies

India . 370 parts In-Stock

1+ parts

$0.180

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370

$0.180

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DigiPath Technology Company

USA . 370 parts In-Stock

1+ parts

$0.180

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370

$0.180

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AZTECH Wire

Italy . 466 parts In-Stock

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$9.370

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466

$9.370

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Component Stockers USA

USA . 502 parts In-Stock

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$99.990

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502

$99.990

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Corphita

USA . 1,878 parts In-Stock

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1,878

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Parana Technologies

USA . 1,209 parts In-Stock

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$0.114

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1,209

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$0.114

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Overview

Experience unparalleled efficiency and reliability with the STTH6102TV1 from STMicroelectronics, a leader in semiconductor innovation. This high-performance rectifier diode meets the demands of diverse applications, ensuring optimal reverse recovery time and minimal energy loss. With robust thermal stability and exceptional power handling capabilities, it's designed to enhance your systems while reducing downtime. Elevate your projects with ST's trusted quality and commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to moisture, enhancing reliability in various environments.

Config: SEPARATE, 2 ELEMENTS

The separate configuration allows for flexible circuit design, making it suitable for different applications while ensuring optimal performance.

Maximum Reverse Recovery Time: 0.03 us

A low reverse recovery time enhances switching speed, which is critical for efficient operation in high-frequency applications.

Maximum Reverse Current: 250 uA

A low maximum reverse current indicates minimal leakage and improved efficiency, which is essential for energy-sensitive applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy mounting and integration into various circuit layouts, contributing to design flexibility.

Reverse Test Voltage: 200 V

A high reverse test voltage ensures that the diode can withstand significant voltage stress, enhancing reliability in demanding applications.

No. of Terminals: 4

With four terminals, the diode allows for efficient connectivity in circuit designs, simplifying integration into various systems.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers stable mounting options, important for maintaining secure connections and reducing vibration-induced failures.

Application: EFFICIENCY

Designed for efficiency, this product is ideal for applications where minimizing energy loss is critical, enhancing overall system performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for use in demanding environments, ensuring reliable performance even under extreme conditions.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures expands application versatility, making it suitable for harsh conditions and environments.

Terminal Finish: NICKEL

Nickel terminal finish provides excellent corrosion resistance, ensuring long-term reliability and durability in various environments.

Terminal Position: UPPER

Upper terminal positioning simplifies connection accessibility, making installation and integration easier in compact spaces.

Case Connection: ISOLATED

Isolated case connections enhance safety by reducing the risk of short circuits, particularly in sensitive electronic applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.81 V

A low forward voltage drop ensures less power loss during operation, improving the efficiency of the entire circuit.

Maximum Output Current: 30 A

Supports a high maximum output current, making it capable of handling demanding loads in power applications efficiently.

No. of Elements: 2

With 2 elements, this diode configuration provides redundancy and stability, enhancing overall performance in various circuits.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a maximum peak reverse voltage of 200 V, this diode can handle significant voltage surges, ensuring resilience in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 400 A

The ability to handle high non-repetitive peak forward current ensures the diode can manage transient conditions without failure.

Diode Element Material: SILICON

Silicon material offers excellent semiconductor properties, ensuring reliable performance and efficiency in various applications.

Technical Specifications

Diodes & Rectifiers STTH6102TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

HIGH SURGE CAPABILITY

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.81 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

250 uA

Maximum Reverse Recovery Time:

.03 us

Reverse Test Voltage:

200 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH6102TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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