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STTH60L06TV1

STMicroelectronics

STTH60L06TV1 by STMicroelectronics

STTH60L06TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and a peak reverse voltage of 600 V. It operates efficiently at temperatures from -55 °C to 150 °C. Ideal for applications requiring rapid switching and high current handling up to 40 A.

Median Price

$22.390

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 97 parts In-Stock

1+ parts

$22.390

100+ parts

$15.134

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97

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$15.134

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Avnet

USA . 250 parts In-Stock

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250

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Digiode

USA . 2,948 parts In-Stock

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$20.558

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2,948

$20.558

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Vyrian

USA . 6,389 parts In-Stock

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Anansix

USA . 1,132 parts In-Stock

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IDEA Electronic Components Group

UK . 78 parts In-Stock

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$0.111

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-

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$0.100

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78

$0.111

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$0.100

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MKK Technologies

India . 2,147 parts In-Stock

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$0.209

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2,147

$0.209

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DigiPath Technology Company

USA . 2,147 parts In-Stock

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$0.209

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2,147

$0.209

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Corphita

USA . 3,924 parts In-Stock

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$19.476

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3,924

$19.476

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Component Stockers USA

USA . 100 parts In-Stock

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$21.980

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$17.080

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100

$21.980

$17.080

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Microchip USA

USA . 6,565 parts In-Stock

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$54.188

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6,565

$54.188

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Parana Technologies

USA . 1,955 parts In-Stock

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$0.133

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1,955

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$0.133

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Perfect Parts

USA . 188 parts In-Stock

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Kepictronics

USA . 90 parts In-Stock

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Authorized Procurement Solutions

USA . 80 parts In-Stock

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80

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Eastek

USA . 70 parts In-Stock

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70

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GreenTree Electronics

Israel . 70 parts In-Stock

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Overview

Unlock exceptional performance with the STTH60L06TV1 diode from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for high-voltage applications, this ultra-fast recovery rectifier ensures reliability and efficiency, enhancing your systems’ durability. With its robust construction and superior thermal management, you can trust it to deliver consistent results in demanding environments. Elevate your designs with the quality that only STMicroelectronics can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures lightweight and durable packaging, making the product suitable for robust applications.

Config: SEPARATE, 2 ELEMENTS

The separate two-element configuration allows for more flexibility in circuit design and application versatility.

Maximum Reverse Recovery Time: 0.09 us

A low reverse recovery time enhances the efficiency of high-frequency switching applications, improving overall performance.

Maximum Reverse Current: 250 uA

A low reverse current value minimizes leakage, which contributes to increased reliability and efficiency in circuit operation.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, enabling easy integration into various electronic designs.

Reverse Test Voltage: 600 V

A high reverse test voltage rating indicates the diode's ability to withstand high voltage scenarios, making it suitable for demanding applications.

No. of Terminals: 4

Having four terminals facilitates multiple configuration options and enhances the connectivity in circuit layouts.

Package Style (Meter): FLANGE MOUNT

Flange mount design adds robustness and stability during installation, ensuring secure mounting in high-vibration environments.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage ultra-fast recovery, this diode is ideal for applications that require quick response times and high efficiency.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to perform effectively in extreme environments, enhancing its durability.

Minimum Operating Temperature: -55 °C

The ability to function in low temperatures makes this diode versatile for various applications, including those in cold environments.

Terminal Finish: NICKEL

Nickel terminal finish ensures excellent corrosion resistance and reliable connectivity, enhancing the overall longevity of the component.

Terminal Position: UPPER

Upper terminal positioning allows for easier accessibility and better organization within circuit layouts, aiding in maintenance.

Case Connection: ISOLATED

Isolated case connection increases safety and prevents undesired interactions with other components in the circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is optimized for converting AC to DC, making it essential for many power supply applications.

Maximum Forward Voltage (VF): 1.25 V

A low forward voltage drop improves energy efficiency, which is crucial for reducing power losses in high current applications.

Maximum Output Current: 40 A

With a high output current rating, this diode can handle substantial loads, making it suitable for demanding electrical environments.

No. of Elements: 2

Having two elements allows for more effective current handling and heat dissipation, leading to improved reliability.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high repetitive peak reverse voltage rating enhances the reliability of the diode in power applications, ensuring durability under high stress.

Maximum Non-Repetitive Peak Forward Current: 210 A

This diode's ability to handle high non-repetitive peak forward currents makes it a robust choice for transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics, ensuring reliable operation across a range of applications.

Technical Specifications

Diodes & Rectifiers STTH60L06TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

210 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

250 uA

Maximum Reverse Recovery Time:

.09 us

Reverse Test Voltage:

600 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH60L06TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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