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STTH6112TV2

STMicroelectronics

STTH6112TV2 by STMicroelectronics

STTH6112TV2 by STMicroelectronics is an ultra-fast soft recovery rectifier diode with a max reverse recovery time of 0.115 µs and can handle up to 30 A output current. It operates efficiently in temperatures from -65 °C to 150°C, making it ideal for high-voltage applications. With a reverse test voltage of 1200 V, this diode ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,116 parts In-Stock

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13,116

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Digiode

USA . 4,027 parts In-Stock

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4,027

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Anansix

USA . 1,778 parts In-Stock

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1,778

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,525 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

$0.037

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1,525

$0.041

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$0.037

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MKK Technologies

India . 1,226 parts In-Stock

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$0.078

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1,226

$0.078

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DigiPath Technology Company

USA . 1,226 parts In-Stock

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$0.078

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1,226

$0.078

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AZTECH Wire

Italy . 456 parts In-Stock

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$19.320

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456

$19.320

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Corphita

USA . 1,026 parts In-Stock

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1,026

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Perfect Parts

USA . 60 parts In-Stock

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60

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Parana Technologies

USA . 52 parts In-Stock

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$0.050

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52

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$0.050

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Overview

Unlock unparalleled efficiency with the STTH6112TV2 diode from STMicroelectronics. Crafted for superior performance, this ultra-fast soft recovery rectifier excels in demanding applications while ensuring reliability and longevity. With a robust design that handles extreme temperatures, it delivers exceptional power management and minimizes energy loss. Choose STMicroelectronics for innovation that drives your projects forward—experience quality that empowers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures excellent durability and resistance to environmental factors, making it suitable for a variety of applications.

Config: SEPARATE, 2 ELEMENTS

The separate 2-element configuration allows for more flexibility in circuit design and improved heat dissipation.

Maximum Reverse Recovery Time: 0.115 us

A low reverse recovery time enhances the diode's efficiency in fast switching applications, reducing power losses.

Maximum Reverse Current: 150 uA

Low reverse current ensures minimal leakage, contributing to higher overall circuit efficiency and performance.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCB, making it ideal for compact designs.

Reverse Test Voltage: 1200 V

A high reverse test voltage indicates excellent breakdown and surge handling capabilities, suitable for demanding applications.

No. of Terminals: 4

With four terminals, the diode offers versatile connection options, facilitating easy integration into various circuits.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides stability and ease of installation in both professional and DIY applications.

Application: ULTRA FAST SOFT RECOVERY

Designed for ultra-fast soft recovery, this diode minimizes voltage spikes, protecting sensitive components in high-speed circuits.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature makes the diode suitable for applications in harsh environments where heat resistance is crucial.

Minimum Operating Temperature: -65 °C

Ability to operate at very low temperatures expands its usability in various environments, including extreme conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers excellent solderability and prevents corrosion, ensuring reliable connections.

Terminal Position: UPPER

Upper terminal positioning facilitates easier access and more efficient assembly in densely packed circuits.

Case Connection: ISOLATED

Isolated case connection enhances safety by preventing unintended electrical paths, ensuring reliable operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, playing a crucial role in power supply systems.

Maximum Forward Voltage (VF): 1.8 V

A low forward voltage drop improves efficiency and reduces heat generation in power circuits.

Maximum Output Current: 30 A

With a maximum output current of 30 A, this diode can handle significant loads, making it suitable for high-power applications.

No. of Elements: 2

Two elements provide enhanced functionality and help in increasing the robustness of high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

This high peak reverse voltage rating ensures reliable performance in voltage-sensitive applications.

Maximum Non-Repetitive Peak Forward Current: 250 A

A high rating for non-repetitive peak forward current provides additional resilience against transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material offers robust performance with established reliability and availability.

Technical Specifications

Diodes & Rectifiers STTH6112TV2 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

150 uA

Maximum Reverse Recovery Time:

.115 us

Reverse Test Voltage:

1200 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH6112TV2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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