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STTH12012TV2

STMicroelectronics

STTH12012TV2 by STMicroelectronics

STTH12012TV2 by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode, featuring a max reverse voltage of 1200 V and a recovery time of just 0.125 µs. It operates efficiently in temperatures from -65 °C to 150 °C. Ideal for applications requiring rapid switching and high current handling up to 60 A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,263 parts In-Stock

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7,263

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Digiode

USA . 2,894 parts In-Stock

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Anansix

USA . 648 parts In-Stock

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648

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IDEA Electronic Components Group

UK . 1,986 parts In-Stock

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$0.036

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-

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$0.032

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1,986

$0.036

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$0.032

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MKK Technologies

India . 1,707 parts In-Stock

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$0.067

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1,707

$0.067

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DigiPath Technology Company

USA . 1,707 parts In-Stock

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$0.067

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1,707

$0.067

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AZTECH Wire

Italy . 588 parts In-Stock

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$15.690

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588

$15.690

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Corphita

USA . 4,229 parts In-Stock

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Parana Technologies

USA . 2,222 parts In-Stock

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$0.043

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2,222

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$0.043

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Kepictronics

USA . 568 parts In-Stock

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568

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Overview

Unlock unparalleled performance with the STTH12012TV2 from STMicroelectronics, a leader in semiconductor innovation. This high-voltage ultra-fast soft recovery rectifier diode is engineered for reliability and efficiency, providing top-tier protection in demanding applications. With exceptional thermal stability and robust design, it ensures optimal operation under extreme conditions, making it the ideal choice for power converters and industrial equipment. Elevate your projects with quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SEPARATE, 2 ELEMENTS

The separate 2-element configuration allows for flexible circuit designs and can improve thermal management and reliability in high-performance applications.

Maximum Reverse Recovery Time: 0.125 us

A low reverse recovery time improves efficiency and reduces switching losses, making this diode ideal for high-frequency applications.

Maximum Reverse Current: 300 uA

A low maximum reverse current ensures minimal leakage and enhances the overall performance of the diode in high voltage applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates effective usage in compact designs and can optimize the use of space on printed circuit boards.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliability in high-voltage applications, making it suitable for demanding circuit designs.

No. of Terminals: 4

Four terminals allow for greater versatility in circuit connections and configurations, enhancing installation options.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a robust mounting solution, ensuring secure placement in various operation conditions.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Specifically designed for high voltage and ultra-fast applications, this diode offers low losses and high efficiency, ideal for modern power electronics.

Maximum Operating Temperature: 150 °C

A high operating temperature rating allows this diode to perform reliably in extreme conditions, suitable for industrial applications.

Minimum Operating Temperature: -65 °C

The wide operating temperature range ensures reliability and performance in diverse environmental conditions.

Terminal Finish: NICKEL

Nickel terminal finish enhances corrosion resistance and improves the longevity of connections in harsh environments.

Terminal Position: UPPER

Upper terminal positioning allows for better accessibility and easier integration into circuit layouts.

Case Connection: ISOLATED

Isolated case connections provide enhanced safety and reliability, preventing unwanted electrical interactions.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.9 V

A low forward voltage drop ensures high efficiency during operation, reducing power loss and heat generation.

Maximum Output Current: 60 A

High output current capability makes this diode suitable for demanding applications requiring significant power handling.

No. of Elements: 2

The presence of two elements allows for better performance in rectification and increases redundancy in critical applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

This high peak reverse voltage capability ensures reliable operation in harsh electrical environments, safeguarding the circuit.

Maximum Non-Repetitive Peak Forward Current: 420 A

High non-repetitive peak forward current rating makes this diode capable of handling surges without failure, enhancing reliability.

Diode Element Material: SILICON

Silicon material offers excellent semiconductor properties, leading to improved efficiency and performance characteristics.

Technical Specifications

Diodes & Rectifiers STTH12012TV2 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.9 V

JESD-30 Code:

R-PUFM-X4

Maximum Non Repetitive Peak Forward Current:

420 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

60 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

300 uA

Maximum Reverse Recovery Time:

.125 us

Reverse Test Voltage:

1200 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH12012TV2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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