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GT20D201

Toshiba

GT20D201 by Toshiba

Toshiba GT20D201 is a P-CHANNEL IGBT transistor with 250V VCEsat and 20A IC. Ideal for power amplifier applications, it has a max power dissipation of 180W, operates up to 150°C, and features a gate-emitter voltage of 20V.

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Overview

Upgrade your power amplifier with the GT20D201 by Toshiba, a top-quality P-CHANNEL IGBT transistor that delivers exceptional performance and reliability. Manufactured by Toshiba, a leader in semiconductor technology, this transistor is perfect for a wide range of applications. With a maximum VCEsat of 3V and a maximum collector current of 20A, the GT20D201 offers superior power dissipation and efficiency. Whether you're looking to enhance your audio system or increase the power output of your electronic devices, this transistor is a must-have for any electronics enthusiast. Experience the difference with the GT20D201 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, ensuring reliability and durability.

Polarity or Channel Type: P-CHANNEL

P-channel IGBTs are known for their lower conduction losses and higher efficiency, making them suitable for power amplifier applications.

Configuration: SINGLE

Simplified design with a single IGBT package, making it easier to integrate into circuits.

Maximum VCEsat: 3 V

Low saturation voltage helps in minimizing power loss and improving efficiency during operation.

Terminal Form: THROUGH-HOLE

Allows for easy installation and soldering onto a circuit board.

Maximum Power Dissipation (Abs): 180 W

Can handle high power levels without overheating, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 250 V

Supports high voltage operation, making it versatile for a variety of power applications.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise control over the IGBT's switching behavior, ensuring safe and reliable operation.

Maximum Collector Current (IC): 20 A

Capable of handling high current loads, suitable for power amplifier applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) GT20D201 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

3.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

180 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

GT20D201 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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