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GT20D101

Toshiba

GT20D101 by Toshiba

Toshiba GT20D101 is an N-CHANNEL IGBT transistor with 250V VCEsat, 20A IC, and 180W power dissipation. Ideal for POWER AMPLIFIER applications due to its high collector current and low VCEsat. Features a PLASTIC/EPOXY package with THROUGH-HOLE terminals for easy installation.

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Overview

Experience the power of innovation with the GT20D101 by Toshiba, a top-quality Insulated Gate Bipolar Transistor designed for high-performance applications. With Toshiba's renowned reputation for excellence in manufacturing, this N-CHANNEL transistor offers reliability and efficiency like no other. Whether you need it for power amplifiers or other industrial uses, the GT20D101 delivers exceptional performance with a maximum collector-emitter voltage of 250V and a maximum power dissipation of 180W. Trust in Toshiba to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good insulation and protection to the transistor, making it durable and reliable for long-term use.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into various power amplifier applications.

Maximum VCEsat: 3 V

Low VCEsat value leads to lower power dissipation, making the transistor more efficient and reducing heat generation.

Maximum Power Dissipation: 180 W

High maximum power dissipation allows the transistor to handle high power loads without overheating, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in demanding conditions without performance degradation.

Maximum Collector-Emitter Voltage: 250 V

High maximum collector-emitter voltage rating ensures the transistor can handle high voltage applications with safety and reliability.

Maximum Gate-Emitter Voltage: 20 V

Adequate maximum gate-emitter voltage rating prevents damage to the transistor from excessive voltage spikes or surges.

Maximum Collector Current (IC): 20 A

High maximum collector current rating allows the transistor to handle high current applications efficiently and reliably.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) GT20D101 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

3.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

180 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

GT20D101 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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