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XM4C129ENCPDTI2

Texas Instruments

XM4C129ENCPDTI2 by Texas Instruments

XM4C129ENCPDTI2 microcontroller by Texas Instruments features 32-bit architecture, 1048576 ROM words, and 262144 RAM bytes. Ideal for industrial applications, it offers 20-Ch 12-Bit ADC channels, CAN and Ethernet connectivity, and a max clock frequency of 25 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,471 parts In-Stock

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Digiode

USA . 2,003 parts In-Stock

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2,003

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PC Components Company LLC

USA . 4 parts In-Stock

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Bristol Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 592 parts In-Stock

1+ parts

$7.410

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One Stop Electronics

USA . 668 parts In-Stock

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$11.000

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Parana Technologies

USA . 50 parts In-Stock

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$19.785

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$19.751

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DigiPath Technology Company

USA . 1,247 parts In-Stock

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$21.785

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$20.043

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$21.785

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ChromeModa Solutions

Germany . 2,620 parts In-Stock

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$22.230

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$18.229

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IDEA Electronic Components Group

UK . 435 parts In-Stock

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$22.230

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$21.118

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$20.007

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435

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$20.007

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A-Z Elektronik GmbH

Germany . 7,122 parts In-Stock

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Corphita

USA . 4,124 parts In-Stock

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Overview

Unlock the limitless possibilities of technology with the XM4C129ENCPDTI2 by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch quality and reliability in their microcontrollers. Perfect for a wide range of applications, this powerful device offers unparalleled performance and efficiency. With advanced features like multiple ADC channels, DMA channels, and a wide range of connectivity options, the XM4C129ENCPDTI2 provides exceptional value and benefits to customers looking to streamline their projects and bring their ideas to life. Choose Texas Instruments for superior technology solutions that push the boundaries of innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection, making the microcontroller suitable for various environments.

Maximum Supply Voltage: 1.32 V

High maximum supply voltage allows for flexibility in power options and handling.

Bit Size: 32

32-bit processing capability enables complex calculations and operations.

ADC Channels: YES

Analog-to-digital converter channels allow for interfacing with analog sensors and signals.

ROM Words: 1048576

Large ROM size provides ample space for program storage and data retention.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture enhances processing speed and efficiency, making the microcontroller suitable for real-time applications.

RAM Bytes: 262144

Generous RAM capacity supports multitasking and data manipulation requirements.

Technology: CMOS

CMOS technology ensures low power consumption and high performance, ideal for energy-efficient applications.

Analog To Digital Convertors: 20-Ch 12-Bit

Multiple ADC channels with high resolution provide accurate conversion of analog signals.

Connectivity: CAN(2), ETHERNET(2), I2C(10), IRDA, QEI, SPI, SSI(4), UART(8), USB

Versatile connectivity options enable seamless communication with other devices and networks.

Technical Specifications

Microcontrollers XM4C129ENCPDTI2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G128

JESD-609 Code:

e4

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

90

No. of Terminals:

128

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Bytes:

262144

ROM Words:

1048576

ROM Programmability:

FLASH

Maximum Seated Height:

1.2 mm

Speed:

120 rpm

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Data EEPROM Size:

6K

Connectivity:

CAN(2), ETHERNET(2), I2C(10), IRDA, QEI, SPI, SSI(4), UART(8), USB

Peripherals:

BOR, COMPARATOR(3), DMA(32), POR, PWM(8), RTC, TIMER(9), WDT(2)

Analog To Digital Convertors:

20-Ch 12-Bit

Trade Compliance

XM4C129ENCPDTI2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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