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XM4C1299NCZADI2

Texas Instruments

XM4C1299NCZADI2 by Texas Instruments

XM4C1299NCZADI2 by Texas Instruments is a 32-bit microcontroller with 24-Ch 12-Bit ADC, 262144 RAM Bytes, and 1048576 ROM Words. Ideal for industrial applications, it offers CAN(2), ETHERNET(2), I2C(10), SPI connectivity options and operates at a max clock frequency of 25 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,458 parts In-Stock

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Digiode

USA . 1,495 parts In-Stock

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1,495

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Distributors (Availability)

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AZTECH Wire

Italy . 371 parts In-Stock

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$16.903

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371

$16.903

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One Stop Electronics

USA . 1,167 parts In-Stock

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$20.000

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Parana Technologies

USA . 1,126 parts In-Stock

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$48.852

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ChromeModa Solutions

Germany . 4,960 parts In-Stock

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$54.890

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$45.010

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4,960

$54.890

$45.010

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IDEA Electronic Components Group

UK . 1,207 parts In-Stock

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$54.890

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$52.146

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$49.401

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1,207

$54.890

$52.146

$49.401

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DigiPath Technology Company

USA . 1,615 parts In-Stock

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$49.489

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1,615

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Corphita

USA . 1,216 parts In-Stock

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Microchip USA

USA . 307 parts In-Stock

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307

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Overview

Unlock endless possibilities with the XM4C1299NCZADI2 microcontroller by Texas Instruments. Expertly crafted with top-quality materials, this powerful device offers unmatched performance and versatility in a compact package. Ideal for a wide range of applications, including industrial automation and consumer electronics, this microcontroller boasts a plethora of features such as multiple ADC and DMA channels, robust peripherals, and high-speed connectivity options. Experience seamless operation and reliable functionality with the XM4C1299NCZADI2, setting new standards in innovation and efficiency. Elevate your projects to new heights with this exceptional product from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the microcontroller lightweight and durable.

Maximum Supply Voltage: 1.32 V

With a maximum supply voltage of 1.32V, this microcontroller is suitable for low power applications.

Bit Size: 32

32-bit architecture provides high processing capabilities and performance for complex applications.

ADC Channels: YES

The presence of Analog to Digital Convertor channels allows for interfacing with analog sensors and signals.

DMA Channels: YES

Direct Memory Access channels enable efficient data transfer and processing without CPU intervention.

ROM Words: 1048576

Large ROM size allows for storing a significant amount of program instructions and data for the microcontroller.

Maximum Clock Frequency: 25 MHz

High maximum clock frequency of 25MHz enables fast execution of instructions and operations.

Peripherals: BOR, COMPARATOR(3), DMA(32), LCD, POR, PWM(8), RTC, TIMER(9), WDT(2)

Multiple peripherals such as LCD, PWM, RTC, and timers enhance the functionality and versatility of the microcontroller.

RAM Bytes: 262144

Large RAM size allows for efficient data storage and manipulation during program execution.

Connectivity: CAN(2), ETHERNET(2), I2C(10), IRDA, QEI, SPI, SSI(4), UART(8), USB

Support for various connectivity options like Ethernet, UART, and USB make this microcontroller suitable for diverse communication requirements.

Technical Specifications

Microcontrollers XM4C1299NCZADI2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B212

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

140

No. of Terminals:

212

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Bytes:

262144

ROM Words:

1048576

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

120 rpm

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Data EEPROM Size:

6K

Connectivity:

CAN(2), ETHERNET(2), I2C(10), IRDA, QEI, SPI, SSI(4), UART(8), USB

Peripherals:

BOR, COMPARATOR(3), DMA(32), LCD, POR, PWM(8), RTC, TIMER(9), WDT(2)

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

XM4C1299NCZADI2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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