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V62/03654-01XE

Texas Instruments

V62/03654-01XE by Texas Instruments

V62/03654-01XE by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 9 ns at 5V, making it suitable for high-speed applications. With a small outline package style and military temperature grade, it is ideal for compact and rugged electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,608 parts In-Stock

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3,608

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Digiode

USA . 1,401 parts In-Stock

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1,401

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Distributors (Availability)

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AZTECH Wire

Italy . 721 parts In-Stock

1+ parts

$16.852

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721

$16.852

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Parana Technologies

USA . 1,040 parts In-Stock

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$18.219

100+ parts

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$18.356

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1,040

$18.219

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$18.356

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DigiPath Technology Company

USA . 2,146 parts In-Stock

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$20.062

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2,146

$20.062

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ChromeModa Solutions

Germany . 3,928 parts In-Stock

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$20.471

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$16.786

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3,928

$20.471

$16.786

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IDEA Electronic Components Group

UK . 2,326 parts In-Stock

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$20.471

100+ parts

$19.447

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$18.424

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2,326

$20.471

$19.447

$18.424

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One Stop Electronics

USA . 256 parts In-Stock

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$28.000

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256

$28.000

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Corphita

USA . 3,115 parts In-Stock

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Overview

Enhance your electronic projects with the V62/03654-01XE from Texas Instruments, a top-tier manufacturer known for its superior quality. This logic gate offers unparalleled performance and reliability, making it ideal for a wide range of applications. With 4 functions and 2 inputs, this small outline package delivers a fast propagation delay of just 9 ns at a nominal supply voltage of 5V. Whether you're designing military-grade equipment or consumer electronics, this versatile component will exceed your expectations. Experience the value and benefits of Texas Instruments' expertise with the V62/03654-01XE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term usage.

Propagation Delay At Nominal Supply: 9 ns

Fast propagation delay ensures quick signal transmission, making the product suitable for high-speed applications.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with most electronic systems, making it versatile for various applications.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish ensures good conductivity and resistance to corrosion, improving the overall performance and longevity of the product.

Temperature Grade: MILITARY

Suitable for use in harsh environments and critical applications where reliability and durability under extreme conditions are essential.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring efficient operation and reliable signal processing.

Technical Specifications

Logic Gates V62/03654-01XE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

V62/03654-01XE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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