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V62/03656-01XE

Texas Instruments

V62/03656-01XE by Texas Instruments

V62/03656-01XE by Texas Instruments is a CMOS logic gate with 6 functions, 9ns propagation delay at 5V. It operates in temperatures from -55 to 125°C and has a peak reflow temperature of 260°C. Ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,691 parts In-Stock

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Digiode

USA . 1,374 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 915 parts In-Stock

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$11.412

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$11.833

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915

$11.412

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DigiPath Technology Company

USA . 1,415 parts In-Stock

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$12.566

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$11.560

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ChromeModa Solutions

Germany . 4,859 parts In-Stock

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$12.822

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$10.514

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$12.822

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IDEA Electronic Components Group

UK . 741 parts In-Stock

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$12.822

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$12.181

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$11.540

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741

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AZTECH Wire

Italy . 696 parts In-Stock

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$15.241

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One Stop Electronics

USA . 341 parts In-Stock

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$31.000

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Component Stockers USA

USA . 470 parts In-Stock

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$99.990

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Corphita

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Overview

Discover the powerful V62/03656-01XE by Texas Instruments, a top-of-the-line logic gates solution that offers unparalleled quality and reliability. With a compact design and advanced CMOS technology, this product is perfect for a wide range of applications in military-grade environments. Experience lightning-fast propagation delay and maximum I (ol) of 8 Amp, providing exceptional performance and efficiency. Trust in Texas Instruments' expertise and innovation to deliver top-notch solutions for your circuit design needs. Elevate your projects with the V62/03656-01XE and unlock endless possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components.

Propagation Delay At Nominal Supply: 9 ns

Fast response time ensures efficient operation of the logic gates.

Surface Mount: YES

Allows for easy and compact installation on a circuit board.

No. of Functions: 6

Offers versatility and flexibility in circuit design.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage for compatibility with other components.

Load Capacitance (CL): 50 pF

Suitable for various applications with moderate capacitance requirements.

Power Supplies (V): 5

Consistent power source for reliable performance.

No. of Terminals: 14

Adequate number of connections for connecting to other components.

Maximum I (ol): 8 Amp

Can handle high output currents without risk of damage.

Maximum Operating Temperature: 125 °C

Suitable for use in a wide range of temperature conditions.

Minimum Operating Temperature: -55 °C

Can operate in cold environments without issues.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance for long-term reliability.

Schmitt Trigger: YES

Helps eliminate noise and improve signal integrity.

Technology: CMOS

Low power consumption and high noise immunity for efficient operation.

Maximum Power Supply Current (ICC): 0.02 mA

Low power consumption for energy-efficient operation.

Technical Specifications

Logic Gates V62/03656-01XE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

V62/03656-01XE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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