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V62/03658-01YE

Texas Instruments

V62/03658-01YE by Texas Instruments

V62/03658-01YE by Texas Instruments is a CMOS Logic Gates IC with 4 functions and 2 inputs. It has a propagation delay of 9ns at 5V, suitable for military-grade applications. The package is small outline, surface mountable, with a max operating temperature of 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,776 parts In-Stock

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7,776

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Digiode

USA . 3,851 parts In-Stock

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3,851

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Distributors (Availability)

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AZTECH Wire

Italy . 610 parts In-Stock

1+ parts

$9.245

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610

$9.245

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Parana Technologies

USA . 722 parts In-Stock

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$19.678

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$19.672

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722

$19.678

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One Stop Electronics

USA . 572 parts In-Stock

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$20.000

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572

$20.000

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DigiPath Technology Company

USA . 1,135 parts In-Stock

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$21.668

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1,135

$21.668

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ChromeModa Solutions

Germany . 4,913 parts In-Stock

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$22.110

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$18.130

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4,913

$22.110

$18.130

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IDEA Electronic Components Group

UK . 1,674 parts In-Stock

1+ parts

$22.110

100+ parts

$21.004

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$19.899

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1,674

$22.110

$21.004

$19.899

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Corphita

USA . 876 parts In-Stock

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Overview

Discover the innovative V62/03658-01YE by Texas Instruments, a high-quality logic gate that offers unmatched performance and reliability. Manufactured by a trusted industry leader, this product is ideal for a wide range of applications. With its fast propagation delay, low power consumption, and compact design, this logic gate provides exceptional value to customers looking for superior functionality and efficiency. Upgrade your projects with the V62/03658-01YE and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and provides good protection to the internal components of the logic gates, ensuring longevity and reliability.

Propagation Delay At Nominal Supply: 9 ns

Fast propagation delay ensures quick response times in processing logic signals, making the product suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows easy integration with existing circuits and components, making it a versatile choice for various applications.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations, making the product flexible for simple logic functions.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the logic gates can withstand harsh environmental conditions and ensure stable performance in a wide range of applications.

Technical Specifications

Logic Gates V62/03658-01YE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

V62/03658-01YE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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