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V62/03660-01XE

Texas Instruments

V62/03660-01XE by Texas Instruments

V62/03660-01XE by Texas Instruments is a CMOS Logic Gates IC with 4 functions and 2 inputs. It has a propagation delay of 16ns at 3.3V, suitable for industrial applications requiring fast signal processing in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,455 parts In-Stock

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6,455

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Digiode

USA . 4,530 parts In-Stock

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4,530

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Distributors (Availability)

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AZTECH Wire

Italy . 619 parts In-Stock

1+ parts

$18.192

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619

$18.192

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Parana Technologies

USA . 2,189 parts In-Stock

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$25.864

100+ parts

-

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$26.461

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2,189

$25.864

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$26.461

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ChromeModa Solutions

Germany . 4,923 parts In-Stock

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$29.061

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$23.830

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4,923

$29.061

$23.830

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IDEA Electronic Components Group

UK . 1,362 parts In-Stock

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$29.061

100+ parts

$27.608

1k+ parts

$26.155

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1,362

$29.061

$27.608

$26.155

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One Stop Electronics

USA . 1,593 parts In-Stock

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$57.000

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1,593

$57.000

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Component Stockers USA

USA . 386 parts In-Stock

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$99.990

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386

$99.990

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Corphita

USA . 4,536 parts In-Stock

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4,536

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DigiPath Technology Company

USA . 683 parts In-Stock

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$26.201

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683

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$26.201

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Overview

Unlock the power of efficient and reliable logic gates with the V62/03660-01XE from Texas Instruments. Crafted with precision using high-quality materials, this versatile component offers a wide range of applications in various industries. With its fast propagation delay and low power consumption, customers can enjoy seamless performance and long-term reliability. Trust Texas Instruments for cutting-edge technology that delivers exceptional value and unmatched benefits for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, which is ideal for portable devices or applications where weight is a concern.

Propagation Delay At Nominal Supply: 16 ns

With a low propagation delay, this logic gate ensures fast signal processing and response times, making it suitable for high-speed applications.

No. of Functions: 4

Having multiple functions in a single package allows for more complex logic operations in a compact design, saving space on the circuit board.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common supply voltage of 3.3V makes this logic gate compatible with a wide range of digital circuits and systems.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature ensures reliability in harsh environments or applications where temperature fluctuates, increasing the longevity of the product.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in noisy electrical environments.

Technical Specifications

Logic Gates V62/03660-01XE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

16 ns

Propagation Delay (tpd):

16 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

V62/03660-01XE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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