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V62/03605-01YE

Texas Instruments

V62/03605-01YE by Texas Instruments

Texas Instruments V62/03605-01YE logic gates feature 6 functions with a propagation delay of 12 ns at 3.3V supply, suitable for military-grade applications. With Schmitt Trigger technology and a max operating temperature of 125°C, these CMOS gates are ideal for high-reliability systems requiring fast response times in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,631 parts In-Stock

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6,631

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Digiode

USA . 4,193 parts In-Stock

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4,193

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 579 parts In-Stock

1+ parts

$6.825

100+ parts

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579

$6.825

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One Stop Electronics

USA . 144 parts In-Stock

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$22.000

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-

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144

$22.000

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Parana Technologies

USA . 1,726 parts In-Stock

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$26.420

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$27.007

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1,726

$26.420

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$27.007

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DigiPath Technology Company

USA . 1,531 parts In-Stock

1+ parts

$29.091

100+ parts

$26.764

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1,531

$29.091

$26.764

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IDEA Electronic Components Group

UK . 859 parts In-Stock

1+ parts

$29.685

100+ parts

$28.201

1k+ parts

$26.716

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859

$29.685

$28.201

$26.716

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ChromeModa Solutions

Germany . 138 parts In-Stock

1+ parts

$29.685

100+ parts

$24.342

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138

$29.685

$24.342

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Corphita

USA . 779 parts In-Stock

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779

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Overview

Elevate your electronic projects with the V62/03605-01YE by Texas Instruments, a top-of-the-line logic gate that guarantees exceptional quality and performance. Manufactured by industry leader Texas Instruments, this component offers unmatched reliability and precision. Ideal for a wide range of applications, this logic gate provides seamless integration and efficient operation. Unlock endless possibilities for your designs with the V62/03605-01YE - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply

12 ns - Offers fast response time, making the logic gates suitable for high-speed applications.

Surface Mount

YES - Easy to mount on circuit boards, saving space and making it convenient for manufacturing processes.

Nominal Supply Voltage / Vsup (V)

3.3 - Compatible with a wide range of systems and can operate efficiently at the specified voltage.

Load Capacitance (CL)

50 pF - Can handle a moderate load capacitance, ensuring stable operation in various circuit configurations.

Maximum Operating Temperature

125 °C - Can withstand high temperatures, suitable for use in demanding environments.

Minimum Operating Temperature

-55 °C - Can operate in extremely low temperatures, making it versatile for different applications.

Technology

CMOS - Uses CMOS technology, providing low power consumption and high noise immunity for efficient operation.

Technical Specifications

Logic Gates V62/03605-01YE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

50 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

18.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

V62/03605-01YE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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