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V62/03645-01XE

Texas Instruments

V62/03645-01XE by Texas Instruments

V62/03645-01XE by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 8.5 ns at 3.3V, suitable for military-grade applications requiring fast signal processing in a small outline package. With surface mount capability and low power consumption, it operates efficiently within -55 to 125 °C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Digiode

USA . 1,424 parts In-Stock

1+ parts

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1,424

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,432 parts In-Stock

1+ parts

$8.686

100+ parts

-

1k+ parts

$9.366

10k+ parts

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1,432

$8.686

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$9.366

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DigiPath Technology Company

USA . 1,598 parts In-Stock

1+ parts

$9.565

100+ parts

$8.800

1k+ parts

-

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1,598

$9.565

$8.800

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ChromeModa Solutions

Germany . 4,527 parts In-Stock

1+ parts

$9.760

100+ parts

$8.003

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-

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4,527

$9.760

$8.003

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IDEA Electronic Components Group

UK . 1,136 parts In-Stock

1+ parts

$9.760

100+ parts

$9.272

1k+ parts

$8.784

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-

1,136

$9.760

$9.272

$8.784

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AZTECH Wire

Italy . 513 parts In-Stock

1+ parts

$14.431

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513

$14.431

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One Stop Electronics

USA . 1,400 parts In-Stock

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$22.000

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1,400

$22.000

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Corphita

USA . 1,797 parts In-Stock

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1,797

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Overview

Discover the unparalleled quality and reliability of Texas Instruments with the V62/03645-01XE Logic Gates. This innovative product offers customers a high-performance solution for their electronic applications, with a compact design and efficient operation. Ideal for a wide range of industries, this logic gate provides fast propagation delay and low power consumption, ensuring optimal performance in any setting. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations and drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Propagation Delay At Nominal Supply: 8.5 ns

Low propagation delay ensures fast signal processing, making the product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy integration into electronic circuits, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, compatible with many electronic systems.

Temperature Grade: MILITARY

Suitable for use in harsh environments due to its military-grade temperature range.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, improving overall performance.

Technical Specifications

Logic Gates V62/03645-01XE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

50 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

V62/03645-01XE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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