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V62/03646-01XE

Texas Instruments

V62/03646-01XE by Texas Instruments

V62/03646-01XE by Texas Instruments is a CMOS Logic Gates IC with 6 functions, 8.5ns propagation delay at 3.3V. It has a small outline package, operates b/w -55 to 125°C, and is suitable for military-grade applications requiring fast signal processing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,473 parts In-Stock

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6,473

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Digiode

USA . 444 parts In-Stock

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444

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 807 parts In-Stock

1+ parts

$17.183

100+ parts

-

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$17.399

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807

$17.183

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$17.399

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AZTECH Wire

Italy . 781 parts In-Stock

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$17.188

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781

$17.188

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DigiPath Technology Company

USA . 1,887 parts In-Stock

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$18.921

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1,887

$18.921

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IDEA Electronic Components Group

UK . 813 parts In-Stock

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$19.307

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$18.342

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$17.376

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813

$19.307

$18.342

$17.376

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ChromeModa Solutions

Germany . 570 parts In-Stock

1+ parts

$19.307

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$15.832

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570

$19.307

$15.832

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One Stop Electronics

USA . 303 parts In-Stock

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$26.000

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303

$26.000

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Corphita

USA . 2,056 parts In-Stock

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Overview

Enhance your electronic projects with the V62/03646-01XE Logic Gates by Texas Instruments. Renowned for their superior quality and reliability, Texas Instruments brings you a product that offers unmatched performance and precision in a wide range of applications. With a compact design and low power consumption, this logic gate provides exceptional value and efficiency. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the V62/03646-01XE Logic Gates today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 8.5 ns

The low propagation delay of 8.5 ns ensures fast operation and response times, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto printed circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage: 3.3V

The 3.3V nominal supply voltage is commonly used in many electronic systems, making these logic gates compatible with a wide range of applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperature environments, ensuring reliable performance in various conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable for digital circuit applications.

Technical Specifications

Logic Gates V62/03646-01XE attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

50 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

V62/03646-01XE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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