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ULN2003ANS

Texas Instruments

ULN2003ANS by Texas Instruments

ULN2003ANS by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V, suitable for switching applications. The package is surface mountable with Gull Wing terminals, made of silicon material in a rectangular shape.

Median Price

$1.043

Lifecycle Status

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8

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1k+

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Texas Instruments

USA . 14,591 parts In-Stock

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$0.956

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$0.735

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$0.387

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$0.387

14,591

$0.956

$0.735

$0.387

$0.387

DigiKey

USA . 14,615 parts In-Stock

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$1.130

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$0.654

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$0.567

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$0.533

14,615

$1.130

$0.654

$0.567

$0.533

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Nova Conductors

Japan . 75 parts In-Stock

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$0.499

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Digiode

USA . 1,740 parts In-Stock

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$0.908

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$0.908

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Chip Stock

USA . 123,560 parts In-Stock

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Vyrian

USA . 14,333 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 209 parts In-Stock

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LWI Electronics Inc

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Parana Technologies

USA . 2,118 parts In-Stock

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$0.326

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$1.557

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2,118

$0.326

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$1.557

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Corohmni

South Africa . 178 parts In-Stock

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$0.329

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$0.329

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DigiPath Technology Company

USA . 1,832 parts In-Stock

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$0.359

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$0.330

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$0.359

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ChromeModa Solutions

Germany . 6,335 parts In-Stock

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$0.366

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$0.300

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$0.366

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IDEA Electronic Components Group

UK . 828 parts In-Stock

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$0.366

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$0.329

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828

$0.366

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Continental Prestige Electronics

USA . 4,113 parts In-Stock

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$0.377

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$0.369

4,113

$0.377

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$0.369

Argo Parts USA

USA . 938 parts In-Stock

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$0.377

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$0.366

938

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.428

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$0.407

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$0.407

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Netroflash

USA . 2,000 parts In-Stock

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$0.499

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Semicontronic

India . 14,579 parts In-Stock

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$0.810

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$0.790

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$0.786

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Ampacity Inc.

Singapore . 14,345 parts In-Stock

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$0.810

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Corphita

USA . 4,809 parts In-Stock

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Microchip USA

USA . 1,031 parts In-Stock

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$13.560

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QUARKTWIN TECHNOLOGY LTD

USA . 28,199 parts In-Stock

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A-Z Elektronik GmbH

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Lixinc

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Metaverse IC Inc.

Canada . 4,946 parts In-Stock

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Authorized Procurement Solutions

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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$0.182

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Kepictronics

USA . 90 parts In-Stock

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Overview

Looking for a reliable solution for switching applications? Look no further than the ULN2003ANS by Texas Instruments. With a reputation for quality and innovation, Texas Instruments delivers top-notch products that meet the needs of customers worldwide. The ULN2003ANS, a small signal bipolar junction transistor, offers exceptional performance and versatility in a compact package. Whether you're working on robotics, automation, or automotive projects, this transistor is sure to enhance your design with its efficiency and reliability. Experience the value and benefits that Texas Instruments brings to the table with the ULN2003ANS.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers high electrical insulation properties, making the transistor durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in most electronic circuits due to their ease of use and compatibility with digital and analog systems.

Configuration: COMPLEX

The complex configuration allows for advanced circuit designs and capabilities, making this transistor suitable for high-performance applications

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid changes in current and voltage, making it ideal for digital circuits.

Surface Mount: YES

Surface mount technology offers compact and efficient component placement on circuit boards, saving space and enhancing overall product performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into circuit layouts, providing a streamlined and organized design.

Terminal Form: GULL WING

The gull wing terminal form enables secure soldering connections for improved reliability and performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can withstand voltage fluctuations without compromising performance, ensuring long-term durability.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its stability, efficiency, and reliability, contributing to the overall quality of the transistor.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of nickel, palladium, and gold terminal finish provides excellent conductivity, corrosion resistance, and solderability for optimal performance and longevity.

Terminal Position: DUAL

Dual terminal position offers versatile mounting options and improved thermal management, enhancing the overall efficiency and reliability of the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable soldering connections during assembly, preventing component damage and ensuring long-term functionality.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2003ANS attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2003ANS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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