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UC1705L883B

Texas Instruments

UC1705L883B by Texas Instruments

UC1705L883B by Texas Instruments is a MOSFET Gate Driver with 20V power supplies, 40V max supply voltage, and 1.5A max output current. Ideal for military applications due to MIL-STD-883 Class B screening level, it features a totem-pole output and operates b/w -55°C to 125°C temperature range.

Median Price

$29.500

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 52 parts In-Stock

1+ parts

$29.500

100+ parts

-

1k+ parts

-

10k+ parts

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52

$29.500

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-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,307 parts In-Stock

1+ parts

$28.025

100+ parts

-

1k+ parts

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1,307

$28.025

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Vyrian

USA . 8,992 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,992

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 198 parts In-Stock

1+ parts

$8.086

100+ parts

-

1k+ parts

$8.672

10k+ parts

-

198

$8.086

-

$8.672

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DigiPath Technology Company

USA . 2,314 parts In-Stock

1+ parts

$8.903

100+ parts

-

1k+ parts

-

10k+ parts

-

2,314

$8.903

-

-

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ChromeModa Solutions

Germany . 2,261 parts In-Stock

1+ parts

$9.085

100+ parts

$7.450

1k+ parts

-

10k+ parts

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2,261

$9.085

$7.450

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IDEA Electronic Components Group

UK . 1,060 parts In-Stock

1+ parts

$9.085

100+ parts

$8.631

1k+ parts

$8.176

10k+ parts

-

1,060

$9.085

$8.631

$8.176

-

Corphita

USA . 4,857 parts In-Stock

1+ parts

$26.550

100+ parts

-

1k+ parts

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4,857

$26.550

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Overview

Experience the reliability and precision of Texas Instruments with the UC1705L883B MOSFET Gate Driver. Designed to meet MIL-STD-883 Class B screening levels, this chip carrier ensures top-notch performance even in extreme conditions. Perfect for military applications, this heat sink-compatible device offers a maximum output current of 1.5A and a turn-on/off time of just 0.06us, providing unparalleled efficiency and control. Trust Texas Instruments for quality and innovation in every product.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent protection and reliability for the MOSFET gate driver, making it suitable for use in demanding environments.

Surface Mount: YES

Being surface mountable makes it easy to integrate this MOSFET gate driver into compact circuit designs, saving space and improving overall system efficiency.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this MOSFET gate driver can withstand elevated temperatures without compromising performance, ensuring reliable operation in various conditions.

Output Polarity: COMPLEMENTARY

Having complementary output polarity allows for efficient control of MOSFETs in both high side and low side configurations, enhancing flexibility in circuit design.

Technology: BIPOLAR

The bipolar technology used in this MOSFET gate driver offers high performance and reliability, making it suitable for demanding applications where precision and consistency are essential.

Technical Specifications

MOSFET Gate Drivers UC1705L883B attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

1.5 A

Nominal Output Peak Current Limit:

1.5 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG

Power Supplies (V):

20

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B

Maximum Seated Height:

2.03 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

12 mA

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Turn-off Time:

.06 us

Turn-on Time:

.06 us

Width:

8.89 mm

Trade Compliance

UC1705L883B Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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