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UC1706J883B

Texas Instruments

UC1706J883B by Texas Instruments

UC1706J883B by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at -55 to 125 °C. It has a max supply voltage of 40 V and output current of 1.5 A. Ideal for military applications requiring high-speed turn-on/off times and complementary output polarity.

Median Price

$15.758

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

$6.050

100+ parts

$5.930

1k+ parts

$5.810

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1

$6.050

$5.930

$5.810

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Avnet

USA . 13 parts In-Stock

1+ parts

-

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$25.467

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$24.764

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$25.467

$24.764

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Distributors (In-Stock)

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Digiode

USA . 4,074 parts In-Stock

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$6.517

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4,074

$6.517

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Freelance Electronics

USA . 4 parts In-Stock

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$23.192

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$23.192

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Vyrian

USA . 2,988 parts In-Stock

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Resion

USA . 7 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,595 parts In-Stock

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$6.174

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$6.174

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Parana Technologies

USA . 261 parts In-Stock

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$7.133

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$7.646

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261

$7.133

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$7.646

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ChromeModa Solutions

Germany . 1,174 parts In-Stock

1+ parts

$8.015

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$6.572

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1,174

$8.015

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IDEA Electronic Components Group

UK . 679 parts In-Stock

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$8.015

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$7.214

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$8.015

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Lixinc

USA . 19,018 parts In-Stock

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DigiPath Technology Company

USA . 126 parts In-Stock

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$7.226

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Overview

Enhance your electronic designs with the UC1706J883B by Texas Instruments, a top-of-the-line MOSFET gate driver that guarantees superior quality and reliability. Manufactured by the renowned Texas Instruments, this product offers unmatched performance in various applications. With its advanced technology and military-grade screening level, customers can trust in its durability and efficiency. Experience seamless operation and optimized functionality with this innovative push-pull based MOSFET driver, designed to meet all your power supply needs. Upgrade your projects today with the UC1706J883B and witness the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material CERAMIC, GLASS-SEALED

This material provides high reliability and durability, making the product suitable for harsh operating environments.

Maximum Supply Voltage 40 V

Allows for compatibility with a wide range of power supply systems, enhancing flexibility in application.

No. of Functions 2

Having multiple functions in a single device simplifies circuit design and saves space on the PCB.

Maximum Operating Temperature 125 °C

Capable of operating at high temperatures, increasing the product's reliability in demanding conditions.

Turn-on Time 0.14 us

Fast turn-on time ensures quick response and efficient operation of the MOSFETs.

Technical Specifications

MOSFET Gate Drivers UC1706J883B attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

1.5 A

Nominal Output Peak Current Limit:

1.5 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

20

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

10 mA

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.13 us

Turn-on Time:

.14 us

Width:

7.62 mm

Trade Compliance

UC1706J883B Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-302-2151, 5962013022151, 5962-01-267-9755, 5962012679755, 5962-01-348-3094, 5962013483094

NIIN

013022151, 012679755, 013483094

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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