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UC1706N

Texas Instruments

UC1706N by Texas Instruments

UC1706N by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating voltage range of 5-40V. Ideal for military applications due to its TTL technology and peak current limit of 1.5A, in a compact rectangular package measuring 7.62mm x 19.3mm with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,789 parts In-Stock

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Digiode

USA . 2,828 parts In-Stock

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2,828

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Distributors (Availability)

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One Stop Electronics

USA . 589 parts In-Stock

1+ parts

$2.500

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589

$2.500

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Parana Technologies

USA . 1,555 parts In-Stock

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$2.978

100+ parts

$276.547

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$2.680

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1,555

$2.978

$276.547

$2.680

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DigiPath Technology Company

USA . 852 parts In-Stock

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$3.279

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852

$3.279

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ChromeModa Solutions

Germany . 6,718 parts In-Stock

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$3.346

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$2.744

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$3.346

$2.744

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IDEA Electronic Components Group

UK . 2,080 parts In-Stock

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$3.346

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$3.011

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2,080

$3.346

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$3.011

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AZTECH Wire

Italy . 316 parts In-Stock

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$19.430

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316

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Corphita

USA . 1,730 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the UC1706N MOSFET Gate Driver. This innovative product offers customers a seamless integration into their applications, providing unmatched performance and efficiency. With a wide range of operating temperatures and military-grade technology, the UC1706N ensures optimal functionality and durability in any environment. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the MOSFET gate driver.

Maximum Supply Voltage: 40 V

The high maximum supply voltage allows for compatibility with a wide range of applications, providing flexibility and versatility.

No. of Functions: 2

Having multiple functions in a single device can reduce the need for additional components, making the design simpler and more cost-effective.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the MOSFET gate driver can withstand demanding operating conditions, providing reliability in various environments.

Technology: TTL

TTL technology offers fast switching speeds and low input/output voltage levels, making the MOSFET gate driver suitable for high-speed applications.

Nominal Output Peak Current Limit: 1.5 A

The high output peak current limit allows the MOSFET gate driver to drive power MOSFETs effectively, enabling efficient switching and performance.

Technical Specifications

MOSFET Gate Drivers UC1706N attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDIP-T16

Length:

19.3 mm

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

UC1706N Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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