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UC1706L/81031

Texas Instruments

UC1706L/81031 by Texas Instruments

UC1706L/81031 by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at 5-40V. It is a MILITARY-grade chip carrier package suitable for push-pull based MOSFET driver applications. With a temperature range of -55 to 125°C, it offers reliable performance in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,180 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,180

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Digiode

USA . 3,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,530

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 413 parts In-Stock

1+ parts

$9.212

100+ parts

-

1k+ parts

$9.853

10k+ parts

-

413

$9.212

-

$9.853

-

DigiPath Technology Company

USA . 714 parts In-Stock

1+ parts

$10.144

100+ parts

-

1k+ parts

-

10k+ parts

-

714

$10.144

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ChromeModa Solutions

Germany . 6,552 parts In-Stock

1+ parts

$10.351

100+ parts

$8.488

1k+ parts

-

10k+ parts

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6,552

$10.351

$8.488

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IDEA Electronic Components Group

UK . 2,047 parts In-Stock

1+ parts

$10.351

100+ parts

$9.833

1k+ parts

$9.316

10k+ parts

-

2,047

$10.351

$9.833

$9.316

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AZTECH Wire

Italy . 531 parts In-Stock

1+ parts

$11.191

100+ parts

-

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10k+ parts

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531

$11.191

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One Stop Electronics

USA . 1,440 parts In-Stock

1+ parts

$31.500

100+ parts

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1,440

$31.500

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Corphita

USA . 4,121 parts In-Stock

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4,121

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Overview

Enhance the performance of your electronic devices with the UC1706L/81031 MOSFET Gate Driver by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in a compact and durable package. Ideal for a wide range of applications, this versatile chip carrier offers superior power management and efficiency. With a maximum supply voltage of 40V and a nominal supply voltage of 20V, this military-grade device ensures optimal performance even in extreme conditions. Upgrade your electronics with the UC1706L/81031 and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired body material ensures high durability and reliability, making this product suitable for demanding industrial applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on printed circuit boards, optimizing space utilization and simplifying assembly processes.

Maximum Supply Voltage: 40 V

With a maximum supply voltage of 40 V, this MOSFET gate driver can effectively drive high-power MOSFETs, making it ideal for high-performance applications.

No. of Functions: 2

Being able to perform multiple functions simultaneously enhances the efficiency and performance of the gate driver, offering versatile functionality for various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in harsh environmental conditions, making this gate driver suitable for a wide range of applications.

Technical Specifications

MOSFET Gate Drivers UC1706L/81031 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

No. of Functions:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

20

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

2.03 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

8.89 mm

Trade Compliance

UC1706L/81031 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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