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UC1706Q

Texas Instruments

UC1706Q by Texas Instruments

The Texas Instruments UC1706Q is a MOSFET Gate Driver with 2 functions, operating at supply voltages b/w 5V to 40V. It features a turn-on time of 0.14us and turn-off time of 0.13us, suitable for military-grade applications requiring fast switching speeds in compact chip carrier packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,519 parts In-Stock

1+ parts

-

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8,519

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Digiode

USA . 697 parts In-Stock

1+ parts

-

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-

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697

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,172 parts In-Stock

1+ parts

$6.339

100+ parts

-

1k+ parts

$7.090

10k+ parts

-

1,172

$6.339

-

$7.090

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ChromeModa Solutions

Germany . 2,267 parts In-Stock

1+ parts

$7.122

100+ parts

$5.840

1k+ parts

-

10k+ parts

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2,267

$7.122

$5.840

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IDEA Electronic Components Group

UK . 529 parts In-Stock

1+ parts

$7.122

100+ parts

-

1k+ parts

$6.410

10k+ parts

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529

$7.122

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$6.410

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AZTECH Wire

Italy . 219 parts In-Stock

1+ parts

$10.983

100+ parts

-

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219

$10.983

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One Stop Electronics

USA . 1,221 parts In-Stock

1+ parts

$36.500

100+ parts

-

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1,221

$36.500

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Corphita

USA . 2,943 parts In-Stock

1+ parts

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2,943

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DigiPath Technology Company

USA . 1,262 parts In-Stock

1+ parts

-

100+ parts

$6.421

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1,262

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$6.421

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Overview

Experience unparalleled performance and reliability with the Texas Instruments UC1706Q MOSFET Gate Driver. Designed with precision and expertise, this top-of-the-line product offers superior quality and efficiency. Ideal for a wide range of applications, from power supplies to motor controls, this chip carrier package boasts a military-grade temperature rating and fast turn-on/off times. Trust in Texas Instruments to provide you with cutting-edge technology that delivers exceptional value and benefits to meet all your needs. Elevate your projects with the UC1706Q today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient assembly onto circuit boards, saving time and effort.

Maximum Supply Voltage: 40 V

Can handle high voltage requirements, making it suitable for power applications.

No. of Functions: 2

Having multiple functions in one device helps in simplifying the circuit design and integration.

Minimum Operating Temperature: -55 °C

Ability to operate at low temperatures makes it suitable for harsh environments or industrial applications.

Maximum Seated Height: 4.57 mm

Compact size allows for space-saving in the design of the overall system.

Temperature Grade: MILITARY

Meets strict military standards for temperature range and performance, ensuring reliability in demanding conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Provides flexibility in driving MOSFETs with different control requirements, making it versatile for various applications.

Technical Specifications

MOSFET Gate Drivers UC1706Q attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQCC-J20

Length:

8.965 mm

No. of Functions:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Maximum Supply Voltage-1:

40 V

Minimum Supply Voltage-1:

5 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Turn-off Time:

.13 us

Turn-on Time:

.14 us

Width:

8.965 mm

Trade Compliance

UC1706Q Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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