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UC1706L883B

Texas Instruments

UC1706L883B by Texas Instruments

UC1706L883B by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at 5-40V. Ideal for military applications, it offers fast turn-on/off times of 0.14/0.13 us and a peak current limit of 1.5A for efficient power management in harsh environments.

Median Price

$4.744

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 68 parts In-Stock

1+ parts

$4.744

100+ parts

$4.317

1k+ parts

$3.890

10k+ parts

-

68

$4.744

$4.317

$3.890

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,067 parts In-Stock

1+ parts

$4.507

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

$4.507

-

-

-

Vyrian

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,400

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,915 parts In-Stock

1+ parts

$4.270

100+ parts

-

1k+ parts

-

10k+ parts

-

3,915

$4.270

-

-

-

Advanced Electronics

New Zealand . 68 parts In-Stock

1+ parts

$4.744

100+ parts

$4.317

1k+ parts

$3.890

10k+ parts

-

68

$4.744

$4.317

$3.890

-

Parana Technologies

USA . 1,097 parts In-Stock

1+ parts

$10.865

100+ parts

-

1k+ parts

$11.343

10k+ parts

-

1,097

$10.865

-

$11.343

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ChromeModa Solutions

Germany . 4,725 parts In-Stock

1+ parts

$12.208

100+ parts

$10.011

1k+ parts

-

10k+ parts

-

4,725

$12.208

$10.011

-

-

IDEA Electronic Components Group

UK . 1,865 parts In-Stock

1+ parts

$12.208

100+ parts

$11.598

1k+ parts

$10.987

10k+ parts

-

1,865

$12.208

$11.598

$10.987

-

DigiPath Technology Company

USA . 1,095 parts In-Stock

1+ parts

-

100+ parts

$11.007

1k+ parts

-

10k+ parts

-

1,095

-

$11.007

-

-

Overview

Looking for a reliable MOSFET Gate Driver for your next project? Look no further than the UC1706L883B by Texas Instruments. With a reputation for quality and innovation, Texas Instruments delivers top-notch products that exceed expectations. The UC1706L883B is versatile and ideal for a wide range of applications. From its robust construction to its superior performance, this gate driver offers unmatched value and benefits. Trust in Texas Instruments to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures durability and reliability, making this product suitable for rugged applications.

Maximum Supply Voltage: 40 V

With a maximum supply voltage of 40 V, this MOSFET gate driver can handle high voltage applications with ease.

No. of Functions: 2

Having 2 functions in a single device provides flexibility and efficiency in controlling MOSFETs.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows for use in demanding environments where temperature fluctuations may occur.

Nominal Output Peak Current Limit: 1.5 A

The high nominal output peak current limit of 1.5 A ensures the gate driver can handle high-current loads, making it suitable for power electronics applications.

Technical Specifications

MOSFET Gate Drivers UC1706L883B attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

No. of Functions:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

20

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B

Maximum Seated Height:

2.03 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.13 us

Turn-on Time:

.14 us

Width:

8.89 mm

Trade Compliance

UC1706L883B Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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