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UC1707DW

Texas Instruments

UC1707DW by Texas Instruments

UC1707DW by Texas Instruments is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 5V to 40V. It features a turn-on time of 0.05us and turn-off time of 0.065us, suitable for military-grade applications requiring fast switching speeds. This small outline package with gull wing terminals is ideal for surface mount designs in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,537 parts In-Stock

1+ parts

-

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5,537

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Digiode

USA . 3,988 parts In-Stock

1+ parts

-

100+ parts

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3,988

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 555 parts In-Stock

1+ parts

$1.887

100+ parts

-

1k+ parts

$2.430

10k+ parts

-

555

$1.887

-

$2.430

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ChromeModa Solutions

Germany . 2,526 parts In-Stock

1+ parts

$2.120

100+ parts

$1.738

1k+ parts

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2,526

$2.120

$1.738

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IDEA Electronic Components Group

UK . 363 parts In-Stock

1+ parts

$2.120

100+ parts

-

1k+ parts

$1.908

10k+ parts

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363

$2.120

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$1.908

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AZTECH Wire

Italy . 834 parts In-Stock

1+ parts

$19.024

100+ parts

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834

$19.024

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One Stop Electronics

USA . 1,074 parts In-Stock

1+ parts

$19.500

100+ parts

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1,074

$19.500

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Corphita

USA . 3,711 parts In-Stock

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3,711

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DigiPath Technology Company

USA . 669 parts In-Stock

1+ parts

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100+ parts

$1.911

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669

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$1.911

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Overview

Unlock the power of precision with the Texas Instruments UC1707DW MOSFET Gate Driver. Crafted with top-quality materials and cutting-edge technology, this product offers unmatched reliability and performance. Ideal for a variety of applications, this driver provides seamless operation and maximum efficiency. Elevate your projects with the UC1707DW and experience the value and advantages that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort.

Maximum Supply Voltage: 40 V

Can handle high voltage applications, providing versatility in usage.

No. of Functions: 2

Provides the ability to control multiple functions, enhancing the performance of the device.

Minimum Operating Temperature: -55 °C

Can operate in extremely cold temperatures, ideal for various environments and conditions.

Nominal Supply Voltage: 20 V

Provides a stable voltage supply for consistent performance of the product.

Turn-on Time: 0.05 us

Fast turn-on time ensures quick response and efficiency in operation.

Technical Specifications

MOSFET Gate Drivers UC1707DW attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

Length:

10.365 mm

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.64 mm

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Maximum Supply Voltage-1:

40 V

Minimum Supply Voltage-1:

5 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.065 us

Turn-on Time:

.05 us

Width:

7.5 mm

Trade Compliance

UC1707DW Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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