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UC1705JQMLV

Texas Instruments

UC1705JQMLV by Texas Instruments

UC1705JQMLV by Texas Instruments is a MILITARY-grade MOSFET Gate Driver with 40V max supply voltage, 1A peak current limit, and -55 to 125 °C operating temperature range. Ideal for BUFFER OR INVERTER BASED MOSFET DRIVER applications in harsh environments requiring MIL-PRF-38535 Class V screening.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,941 parts In-Stock

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5,941

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Digiode

USA . 996 parts In-Stock

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996

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,266 parts In-Stock

1+ parts

$9.747

100+ parts

$905.183

1k+ parts

$8.773

10k+ parts

-

2,266

$9.747

$905.183

$8.773

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DigiPath Technology Company

USA . 940 parts In-Stock

1+ parts

$10.733

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940

$10.733

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IDEA Electronic Components Group

UK . 1,485 parts In-Stock

1+ parts

$10.952

100+ parts

$10.404

1k+ parts

$9.857

10k+ parts

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1,485

$10.952

$10.404

$9.857

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ChromeModa Solutions

Germany . 304 parts In-Stock

1+ parts

$10.952

100+ parts

$8.981

1k+ parts

-

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304

$10.952

$8.981

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AZTECH Wire

Italy . 634 parts In-Stock

1+ parts

$12.738

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634

$12.738

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One Stop Electronics

USA . 1,119 parts In-Stock

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$26.500

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1,119

$26.500

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Corphita

USA . 4,205 parts In-Stock

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4,205

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Overview

Unlock the potential of your electronic designs with the UC1705JQMLV by Texas Instruments. Crafted with precision and expertise, this MOSFET gate driver offers unparalleled quality and reliability. Ideal for military-grade applications, this device ensures peak performance even in the harshest environments. With its advanced technology and high-side driver capability, the UC1705JQMLV delivers exceptional value and benefits to customers seeking superior control and efficiency. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package ensures high reliability and durability, making this MOSFET gate driver suitable for rugged environments.

Maximum Supply Voltage: 40 V

With a high maximum supply voltage of 40V, this gate driver can handle a wide range of applications and provide flexibility in design.

Screening Level: MIL-PRF-38535 Class V

Being classified under MIL-PRF-38535 Class V ensures that this MOSFET gate driver meets stringent military standards for performance and quality.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier integration into circuit layouts and is commonly used for efficient board space utilization.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the gate driver to external components, enabling complex circuit configurations.

Minimum Supply Voltage: 5 V

The low minimum supply voltage requirement of 5V allows for compatibility with a wide range of power sources, making this gate driver versatile and easy to integrate.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this gate driver can operate reliably in harsh environments and high-temperature conditions.

Terminal Position: DUAL

The dual terminal position allows for easy connectivity and ensures stable and secure connections for efficient performance.

Width: 7.62 mm

The compact width of 7.62mm enables space-saving integration and efficient board layouts in constrained environments.

High Side Driver: YES

Having a high-side driver capability allows this MOSFET gate driver to effectively switch high-side power transistors, improving overall circuit efficiency.

Technology: BIPOLAR

Utilizing bipolar technology ensures fast and precise switching of MOSFETs, making this gate driver suitable for high-frequency applications and demanding performance requirements.

Nominal Supply Voltage: 20 V

The nominal supply voltage of 20V offers a balance between power efficiency and performance, making this gate driver ideal for a wide range of applications.

Nominal Output Peak Current Limit: 1 A

The 1A peak output current limit ensures reliable and safe operation of connected MOSFETs, protecting them from overcurrent conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Being a buffer or inverter-based MOSFET driver interface IC type, this gate driver offers versatility in driving various types of MOSFET configurations, providing flexibility in design and application requirements.

Technical Specifications

MOSFET Gate Drivers UC1705JQMLV attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-GDIP-T8

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class V

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

UC1705JQMLV Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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