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UC1706J

Texas Instruments

UC1706J by Texas Instruments

UC1706J by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at -55 to 125 °C. It has a max supply voltage of 40 V and output current of 1.5 A, suitable for military-grade applications requiring fast turn-on/off times and push-pull based interface IC type.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 5,337 parts In-Stock

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Digiode

USA . 2,684 parts In-Stock

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2,684

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Chip Stock

USA . 450 parts In-Stock

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450

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South Electronics

USA . 65 parts In-Stock

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PC Components Company LLC

USA . 12 parts In-Stock

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Bristol Electronics

USA . 12 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 797 parts In-Stock

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$9.328

100+ parts

$866.255

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$8.395

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797

$9.328

$866.255

$8.395

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AZTECH Wire

Italy . 435 parts In-Stock

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$9.777

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DigiPath Technology Company

USA . 2,268 parts In-Stock

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$10.271

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ChromeModa Solutions

Germany . 2,903 parts In-Stock

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$10.481

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$8.594

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$10.481

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IDEA Electronic Components Group

UK . 940 parts In-Stock

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$10.481

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$9.957

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$9.433

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940

$10.481

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$9.433

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Ampacity Inc.

Singapore . 956 parts In-Stock

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$31.500

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One Stop Electronics

USA . 1,277 parts In-Stock

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$35.500

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Kepictronics

USA . 9,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,154 parts In-Stock

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Lixinc

USA . 5,809 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 1,765 parts In-Stock

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Overview

Elevate your electronic designs with the UC1706J by Texas Instruments, a top-of-the-line MOSFET Gate Driver that delivers unparalleled quality and reliability. Manufactured by industry leader Texas Instruments, this product is designed to meet the demands of various applications in the electronics industry. With its advanced features and cutting-edge technology, the UC1706J offers customers exceptional value and benefits, making it the perfect choice for those seeking high-performance solutions. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the internal components, ensuring the longevity of the product.

Maximum Supply Voltage: 40 V

Allows for a wide range of applications and flexibility in power supply requirements.

No. of Functions: 2

Having multiple functions in one package saves space and simplifies design complexity.

Temperature Grade: MILITARY

Suitable for use in harsh environments and high-temperature operations, making it reliable for military applications.

Maximum Output Current: 1.5 A

Capable of handling high output currents, making it suitable for driving MOSFETs in power applications.

Technical Specifications

MOSFET Gate Drivers UC1706J attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

1.5 A

Nominal Output Peak Current Limit:

1.5 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

10 mA

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.13 us

Turn-on Time:

.14 us

Width:

7.62 mm

Trade Compliance

UC1706J Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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