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DRV8706SQRHBRQ1

Texas Instruments

DRV8706SQRHBRQ1 by Texas Instruments

DRV8706SQRHBRQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and operating temperature range of -40 to 125°C. It features push-pull output characteristics, suitable for automotive applications requiring high side drivers. With a turn-on time of 0.85us and turn-off time of 0.6us, it offers precise control in automotive systems.

Median Price

$2.262

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 3,692 parts In-Stock

1+ parts

$2.262

100+ parts

$1.869

1k+ parts

$1.010

10k+ parts

-

3,692

$2.262

$1.869

$1.010

-

Mouser Electronics

USA . 3,186 parts In-Stock

1+ parts

$3.910

100+ parts

$2.390

1k+ parts

$2.090

10k+ parts

$2.030

3,186

$3.910

$2.390

$2.090

$2.030

DigiKey

USA . 4,831 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$2.020

4,831

-

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-

$2.020

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 79 parts In-Stock

1+ parts

$1.366

100+ parts

-

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79

$1.366

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Digiode

USA . 4,838 parts In-Stock

1+ parts

$2.149

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4,838

$2.149

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Chip Stock

USA . 42,000 parts In-Stock

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42,000

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ComSIT Distribution GmbH

Germany . 4,500 parts In-Stock

1+ parts

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4,500

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Vyrian

USA . 3,317 parts In-Stock

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3,317

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Cyclops Electronics Ltd

UK . 890 parts In-Stock

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890

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,700 parts In-Stock

1+ parts

$1.366

100+ parts

-

1k+ parts

-

10k+ parts

$1.339

2,700

$1.366

-

-

$1.339

Argo Parts USA

USA . 2,285 parts In-Stock

1+ parts

$1.366

100+ parts

-

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2,285

$1.366

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Netroflash

USA . 100 parts In-Stock

1+ parts

$1.366

100+ parts

-

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100

$1.366

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Modulus Dynamics

Lithuania . 23 parts In-Stock

1+ parts

$1.517

100+ parts

$1.502

1k+ parts

$1.456

10k+ parts

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23

$1.517

$1.502

$1.456

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Ampacity Inc.

Singapore . 3,578 parts In-Stock

1+ parts

$1.920

100+ parts

-

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3,578

$1.920

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Corphita

USA . 4,597 parts In-Stock

1+ parts

$2.036

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4,597

$2.036

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Corohmni

South Africa . 1,051 parts In-Stock

1+ parts

$2.351

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1,051

$2.351

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Semicontronic

India . 3,406 parts In-Stock

1+ parts

$4.180

100+ parts

$4.076

1k+ parts

$4.055

10k+ parts

-

3,406

$4.180

$4.076

$4.055

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Parana Technologies

USA . 2,003 parts In-Stock

1+ parts

$7.583

100+ parts

-

1k+ parts

$8.094

10k+ parts

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2,003

$7.583

-

$8.094

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ChromeModa Solutions

Germany . 4,150 parts In-Stock

1+ parts

$8.520

100+ parts

$6.986

1k+ parts

-

10k+ parts

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4,150

$8.520

$6.986

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IDEA Electronic Components Group

UK . 340 parts In-Stock

1+ parts

$8.520

100+ parts

$8.094

1k+ parts

$7.668

10k+ parts

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340

$8.520

$8.094

$7.668

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Lixinc

USA . 14,166 parts In-Stock

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14,166

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A-Z Elektronik GmbH

Germany . 6,000 parts In-Stock

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6,000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Futuretech Components

Singapore . 500 parts In-Stock

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500

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DigiPath Technology Company

USA . 131 parts In-Stock

1+ parts

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100+ parts

$7.682

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131

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$7.682

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Overview

Unleash the power of the DRV8706SQRHBRQ1 by Texas Instruments, a top-tier MOSFET Gate Driver designed for high-quality performance in automotive applications. With Texas Instruments' reputation for excellence in semiconductor manufacturing, this driver offers unparalleled reliability and durability. Ideal for automotive systems, this driver ensures efficient power management and precise control. Experience seamless operation and superior functionality with the DRV8706SQRHBRQ1, making it the perfect choice for your next automotive project. Drive innovation and elevate your designs with this exceptional MOSFET Gate Driver from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating conditions.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 37 V

With a high maximum supply voltage, this gate driver can handle a wide range of power requirements.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high quality and reliability, making this driver suitable for automotive applications.

Package Shape: SQUARE

The square package shape allows for easy integration into compact designs.

Output Characteristics: PUSH-PULL

The push-pull output characteristics provide efficient switching between high and low states for optimal performance.

Temperature Grade: AUTOMOTIVE

With an automotive-grade temperature range, this gate driver is suitable for harsh operating environments.

High Side Driver: YES

The presence of a high side driver allows for efficient control of power MOSFETs in automotive and industrial applications.

Turn-on Time: 0.85 us

The fast turn-on time ensures quick response and high efficiency in switching applications.

Nominal Output Peak Current Limit: 0.062 A

The nominal output peak current limit ensures safe operation and protection for connected devices.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge based MOSFET driver IC interface provides efficient and reliable control over MOSFETs in power applications.

Turn-off Time: 0.6 us

The fast turn-off time ensures minimal switching losses and high efficiency in power control.

Technical Specifications

MOSFET Gate Drivers DRV8706SQRHBRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

37 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Trade Compliance

DRV8706SQRHBRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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