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DRV8353RFHRGZR

Texas Instruments

DRV8353RFHRGZR by Texas Instruments

DRV8353RFHRGZR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 75V and min supply voltage of 9V. It operates in automotive-grade temperatures from -40 to 125°C, featuring push-pull output characteristics for high side driving applications. With a nominal output peak current limit of 2A, it is suitable for half-bridge based MOSFET driver interfaces in various automotive and industrial settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,389 parts In-Stock

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Digiode

USA . 4,869 parts In-Stock

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Nova Conductors

Japan . 80 parts In-Stock

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Parana Technologies

USA . 1,594 parts In-Stock

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$8.993

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$9.662

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$8.993

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$9.662

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ChromeModa Solutions

Germany . 2,845 parts In-Stock

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$10.104

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$8.285

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IDEA Electronic Components Group

UK . 841 parts In-Stock

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$10.104

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$9.599

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$9.094

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841

$10.104

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$9.094

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Ampacity Inc.

Singapore . 738 parts In-Stock

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$17.500

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738

$17.500

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AZTECH Wire

Italy . 898 parts In-Stock

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$19.127

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One Stop Electronics

USA . 1,436 parts In-Stock

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$34.500

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Continental Prestige Electronics

USA . 4,438 parts In-Stock

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Microchip USA

USA . 2,155 parts In-Stock

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DigiPath Technology Company

USA . 1,628 parts In-Stock

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$9.110

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Argo Parts USA

USA . 968 parts In-Stock

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Corphita

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Aranea Global

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Overview

Discover the DRV8353RFHRGZR by Texas Instruments, a top-tier MOSFET Gate Driver designed for high performance and reliability. Made by the reputable manufacturer Texas Instruments, this product is perfect for a wide range of applications in automotive and industrial settings. With its advanced features and durable construction, the DRV8353RFHRGZR offers unmatched value and benefits to customers looking for a quality solution. Upgrade your systems with this cutting-edge chip carrier package that delivers true output polarity and push-pull operation, ensuring optimal performance in any environment. Unlock the potential of your projects with the DRV8353RFHRGZR from Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using plastic/epoxy as the package body material provides a lightweight and durable solution for housing the components of the MOSFET gate driver, ensuring longevity and reliability.

Surface Mount: YES

The surface mount capability allows for easy integration of the gate driver onto circuit boards, making installation and assembly efficient and convenient.

Maximum Supply Voltage: 75 V

With a high maximum supply voltage, this gate driver can effectively control MOSFETs in a wide range of applications, offering flexibility and versatility.

Package Shape: SQUARE

The square package shape enables a compact and space-saving design for the gate driver, making it suitable for installation in tight spaces or crowded PCB layouts.

No. of Terminals: 48

The abundance of terminals provides ample connectivity options, allowing for versatile configurations and connections with other components in the system.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The chip carrier, heat sink/slug, and very thin profile package style enhances thermal dissipation and reduces the overall footprint of the gate driver, making it an efficient choice for heat-sensitive applications.

Minimum Supply Voltage: 9 V

The low minimum supply voltage requirement ensures compatibility with a wide range of power sources, allowing for flexibility in powering the gate driver.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance ensures the gate driver can withstand elevated temperatures, making it suitable for demanding environments or industrial applications.

Technical Specifications

MOSFET Gate Drivers DRV8353RFHRGZR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

13 mA

Maximum Supply Voltage:

75 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1000 us

Turn-on Time:

1000 us

Width:

7 mm

Trade Compliance

DRV8353RFHRGZR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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