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DRV8300DPWR

Texas Instruments

DRV8300DPWR by Texas Instruments

DRV8300DPWR by Texas Instruments is a MOSFET gate driver with 20V max supply voltage, -40 to 125°C operating temperature range, and 0.03us turn-on/off time. Ideal for automotive applications, it features a small outline package with push-pull output polarity and true high side driver capability.

Median Price

$0.970

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 12,704 parts In-Stock

1+ parts

$0.692

100+ parts

$0.532

1k+ parts

$0.280

10k+ parts

-

12,704

$0.692

$0.532

$0.280

-

Mouser Electronics

USA . 7,414 parts In-Stock

1+ parts

$0.970

100+ parts

$0.532

1k+ parts

$0.455

10k+ parts

$0.423

7,414

$0.970

$0.532

$0.455

$0.423

DigiKey

USA . 6,397 parts In-Stock

1+ parts

$1.120

100+ parts

$0.647

1k+ parts

$0.567

10k+ parts

-

6,397

$1.120

$0.647

$0.567

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,120 parts In-Stock

1+ parts

$0.657

100+ parts

-

1k+ parts

-

10k+ parts

-

3,120

$0.657

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

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300

$0.879

-

-

-

Chip Stock

USA . 212,400 parts In-Stock

1+ parts

-

100+ parts

-

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212,400

-

-

-

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Vyrian

USA . 10,115 parts In-Stock

1+ parts

-

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-

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10,115

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 10,424 parts In-Stock

1+ parts

$0.550

100+ parts

-

1k+ parts

-

10k+ parts

-

10,424

$0.550

-

-

-

Corphita

USA . 797 parts In-Stock

1+ parts

$0.623

100+ parts

-

1k+ parts

-

10k+ parts

-

797

$0.623

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.862

100+ parts

-

1k+ parts

$0.827

10k+ parts

-

100

$0.862

-

$0.827

-

Continental Prestige Electronics

USA . 5,468 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

10k+ parts

$0.862

5,468

$0.879

-

-

$0.862

Argo Parts USA

USA . 1,048 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,048

$0.879

-

-

-

Parana Technologies

USA . 2,008 parts In-Stock

1+ parts

$4.694

100+ parts

-

1k+ parts

$5.179

10k+ parts

-

2,008

$4.694

-

$5.179

-

ChromeModa Solutions

Germany . 5,055 parts In-Stock

1+ parts

$5.274

100+ parts

$4.325

1k+ parts

-

10k+ parts

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5,055

$5.274

$4.325

-

-

IDEA Electronic Components Group

UK . 2,118 parts In-Stock

1+ parts

$5.274

100+ parts

-

1k+ parts

$4.747

10k+ parts

-

2,118

$5.274

-

$4.747

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Corohmni

South Africa . 93 parts In-Stock

1+ parts

$14.402

100+ parts

-

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-

10k+ parts

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93

$14.402

-

-

-

Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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12,000

-

-

-

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A-Z Elektronik GmbH

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

-

-

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DigiPath Technology Company

USA . 1,710 parts In-Stock

1+ parts

-

100+ parts

$4.755

1k+ parts

-

10k+ parts

-

1,710

-

$4.755

-

-

Lixinc

USA . 778 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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778

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Overview

Texas Instruments presents the DRV8300DPWR, a top-of-the-line MOSFET gate driver designed for peak performance and reliability. With a reputation for excellence in semiconductor manufacturing, Texas Instruments guarantees superior quality and durability. This versatile driver is ideal for a variety of applications, offering customers unmatched value and benefits. Experience seamless operation and enhanced efficiency with the DRV8300DPWR – the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the gate driver from environmental factors.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Supply Voltage: 20 V

Supports a wide range of applications that require higher voltages, increasing the versatility of the gate driver.

No. of Terminals: 20

Provides ample connection points for interfacing with external components and circuitry.

Maximum Operating Temperature: 125 °C

Ensures reliable operation even in high-temperature environments, making it suitable for a variety of industrial applications.

Output Characteristics: PUSH-PULL

Delivers efficient output signal control, allowing for faster switching and improved performance of connected MOSFETs.

Width: 4.4 mm

Compact size enables easy integration into tight spaces and provides flexibility in PCB layout.

Nominal Supply Voltage-1: 12 V

Optimal voltage level for consistent and reliable operation of the gate driver.

Technical Specifications

MOSFET Gate Drivers DRV8300DPWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.75 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

1.4 mA

Minimum Supply Voltage:

5 V

Maximum Supply Voltage-1:

20 V

Minimum Supply Voltage-1:

5 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.03 us

Turn-on Time:

.03 us

Width:

4.4 mm

Trade Compliance

DRV8300DPWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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