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DRV8350RFSRGZR

Texas Instruments

DRV8350RFSRGZR by Texas Instruments

DRV8350RFSRGZR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 75V and min supply voltage of 9V. It operates in automotive grade temperatures (-40 to 125°C) and has a nominal output peak current limit of 2A, making it ideal for automotive applications requiring high-side drivers with push-pull output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,797 parts In-Stock

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8,797

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Digiode

USA . 3,390 parts In-Stock

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3,390

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Distributors (Availability)

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Parana Technologies

USA . 47 parts In-Stock

1+ parts

$9.617

100+ parts

-

1k+ parts

$10.210

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47

$9.617

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$10.210

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ChromeModa Solutions

Germany . 2,645 parts In-Stock

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$10.806

100+ parts

$8.861

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$10.806

$8.861

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IDEA Electronic Components Group

UK . 832 parts In-Stock

1+ parts

$10.806

100+ parts

$10.266

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$9.725

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832

$10.806

$10.266

$9.725

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Native Components

USA . 875 parts In-Stock

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$14.835

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875

$14.835

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Northwest PG Solutions

USA . 1,037 parts In-Stock

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$16.319

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$14.687

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1,037

$16.319

$14.687

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AZTECH Wire

Italy . 734 parts In-Stock

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$19.420

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734

$19.420

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One Stop Electronics

USA . 1,122 parts In-Stock

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$19.500

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$19.500

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Microchip USA

USA . 2,368 parts In-Stock

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2,368

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Corphita

USA . 617 parts In-Stock

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617

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DigiPath Technology Company

USA . 426 parts In-Stock

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$9.743

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426

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$9.743

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Overview

Experience the power of cutting-edge technology with the DRV8350RFSRGZR by Texas Instruments, a leading manufacturer in the industry. This MOSFET Gate Driver offers unrivaled quality and reliability, making it ideal for automotive applications where precision and efficiency are key. With a wide range of operating temperatures and a compact design, this driver maximizes performance while minimizing space requirements. Trust Texas Instruments to deliver superior products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the gate driver, making it suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 75 V

With a high maximum supply voltage, this gate driver can handle demanding voltage requirements in different systems.

Minimum Supply Voltage: 9 V

The low minimum supply voltage allows for operation in systems with lower voltage levels, increasing versatility.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in environments with elevated temperatures.

Output Characteristics: PUSH-PULL

The push-pull output configuration enhances efficiency and helps in achieving faster switching speeds for connected MOSFETs.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

This terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections.

High Side Driver: YES

Having a high side driver allows for efficient control of MOSFETs connected on the high side of the circuit, improving performance.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature rating makes this gate driver suitable for automotive applications where reliability under harsh conditions is essential.

Technical Specifications

MOSFET Gate Drivers DRV8350RFSRGZR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

13 mA

Maximum Supply Voltage:

75 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1000 us

Turn-on Time:

1000 us

Width:

7 mm

Trade Compliance

DRV8350RFSRGZR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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