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DRV8350RFHRGZR

Texas Instruments

DRV8350RFHRGZR by Texas Instruments

DRV8350RFHRGZR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 75V and output polarity as TRUE. It is designed for automotive applications, featuring a turn-on time of 1000µs and high side driver capability. The package style includes chip carrier and very thin profile, making it suitable for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,664 parts In-Stock

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Vyrian

USA . 2,187 parts In-Stock

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Northwest PG Solutions

USA . 1,946 parts In-Stock

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$3.004

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$3.004

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One Stop Electronics

USA . 1,292 parts In-Stock

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$8.500

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Parana Technologies

USA . 1,060 parts In-Stock

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$12.351

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AZTECH Wire

Italy . 871 parts In-Stock

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DigiPath Technology Company

USA . 2,217 parts In-Stock

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$13.154

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ChromeModa Solutions

Germany . 2,392 parts In-Stock

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$13.422

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$11.006

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IDEA Electronic Components Group

UK . 1,343 parts In-Stock

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$13.422

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$12.751

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$12.080

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Microchip USA

USA . 2,175 parts In-Stock

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Corphita

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Native Components

USA . 152 parts In-Stock

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Overview

Take your automotive applications to the next level with the DRV8350RFHRGZR by Texas Instruments. This MOSFET Gate Driver delivers unparalleled quality and reliability, thanks to the renowned manufacturer's expertise in semiconductor technology. With a wide operating temperature range and high supply voltage capabilities, this driver is perfect for demanding environments. Experience seamless performance and efficient power management with the DRV8350RFHRGZR, ensuring optimal functionality for your projects. Elevate your designs with Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it suitable for various environments and applications.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design, perfect for compact electronic systems.

Maximum Supply Voltage: 75 V

Ability to handle high supply voltage ensures compatibility with a wide range of circuits and power requirements.

Minimum Supply Voltage: 9 V

Low minimum supply voltage enables efficient operation even with limited power sources.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliability and stability in harsh conditions or high-performance applications.

Output Characteristics: PUSH-PULL

Push-pull output configuration offers improved efficiency, reduced power dissipation, and better signal integrity.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

This finish provides excellent conductivity, corrosion resistance, and solderability for long-term performance.

Width: 7 mm

Compact width allows for easy integration into tight spaces and dense PCB layouts.

High Side Driver: YES

High side driver capability enables efficient and responsive control of power transistors in both low- and high-side configurations.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures reliable operation in automotive applications subjected to extreme heat or cold.

Technical Specifications

MOSFET Gate Drivers DRV8350RFHRGZR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

13 mA

Maximum Supply Voltage:

75 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1000 us

Turn-on Time:

1000 us

Width:

7 mm

Trade Compliance

DRV8350RFHRGZR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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