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DRV8714SQRVJRQ1

Texas Instruments

DRV8714SQRVJRQ1 by Texas Instruments

DRV8714SQRVJRQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V. It is designed for automotive applications and has a temperature grade of AUTOMOTIVE. With a turn-on time of 0.85us and turn-off time of 0.6us, it provides efficient control for half bridge based MOSFET drivers.

Median Price

$6.170

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 4,640 parts In-Stock

1+ parts

$4.020

100+ parts

$3.522

1k+ parts

$1.990

10k+ parts

-

4,640

$4.020

$3.522

$1.990

-

Mouser Electronics

USA . 5,722 parts In-Stock

1+ parts

$6.170

100+ parts

$3.970

1k+ parts

$3.630

10k+ parts

$3.570

5,722

$6.170

$3.970

$3.630

$3.570

DigiKey

USA . 5,519 parts In-Stock

1+ parts

$6.330

100+ parts

$4.084

1k+ parts

$3.938

10k+ parts

-

5,519

$6.330

$4.084

$3.938

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.461

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$3.461

-

-

-

Digiode

USA . 2,263 parts In-Stock

1+ parts

$3.819

100+ parts

-

1k+ parts

-

10k+ parts

-

2,263

$3.819

-

-

-

Vyrian

USA . 5,426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,426

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,254 parts In-Stock

1+ parts

$3.461

100+ parts

-

1k+ parts

-

10k+ parts

-

4,254

$3.461

-

-

-

Continental Prestige Electronics

USA . 2,605 parts In-Stock

1+ parts

$3.461

100+ parts

-

1k+ parts

-

10k+ parts

$3.391

2,605

$3.461

-

-

$3.391

Parana Technologies

USA . 220 parts In-Stock

1+ parts

$3.596

100+ parts

-

1k+ parts

$4.113

10k+ parts

-

220

$3.596

-

$4.113

-

Corphita

USA . 4,076 parts In-Stock

1+ parts

$3.618

100+ parts

-

1k+ parts

-

10k+ parts

-

4,076

$3.618

-

-

-

DigiPath Technology Company

USA . 1,220 parts In-Stock

1+ parts

$3.960

100+ parts

$3.643

1k+ parts

-

10k+ parts

-

1,220

$3.960

$3.643

-

-

ChromeModa Solutions

Germany . 5,242 parts In-Stock

1+ parts

$4.041

100+ parts

$3.314

1k+ parts

-

10k+ parts

-

5,242

$4.041

$3.314

-

-

IDEA Electronic Components Group

UK . 2,016 parts In-Stock

1+ parts

$4.041

100+ parts

-

1k+ parts

$3.637

10k+ parts

-

2,016

$4.041

-

$3.637

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Ampacity Inc.

Singapore . 5,093 parts In-Stock

1+ parts

$7.440

100+ parts

-

1k+ parts

-

10k+ parts

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5,093

$7.440

-

-

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Corohmni

South Africa . 64 parts In-Stock

1+ parts

$12.485

100+ parts

-

1k+ parts

-

10k+ parts

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64

$12.485

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$3.391

1k+ parts

$3.287

10k+ parts

$3.218

2,000

-

$3.391

$3.287

$3.218

Overview

Experience superior performance and reliability with the DRV8714SQRVJRQ1 MOSFET Gate Driver by Texas Instruments. As a trusted manufacturer, Texas Instruments delivers cutting-edge technology and precision engineering to ensure the highest quality products. The DRV8714SQRVJRQ1 is perfect for a wide range of applications, offering exceptional value and advantages to customers. With its robust design and advanced features, this gate driver provides efficient power management and precise control, allowing you to optimize your system's performance. Trust in Texas Instruments for unparalleled quality and experience the difference with the DRV8714SQRVJRQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material ensures durability and protection against external elements, making it suitable for various applications.

Surface Mount: YES

With the ability to be surface mounted, this MOSFET gate driver offers easy installation and compatibility with modern PCB designs.

Maximum Supply Voltage: 37 V

The high maximum supply voltage of 37V allows this gate driver to handle a wide range of power requirements, making it versatile for different applications.

No. of Functions: 1

This single-function gate driver simplifies circuit design and reduces component count, resulting in improved simplicity, reliability, and cost-effectiveness.

Screening Level: AEC-Q100

The AEC-Q100 screening level confirms the product's high reliability and quality standards, making it suitable for automotive applications and harsh environments.

Package Shape: SQUARE

The square package shape provides a compact design, optimizing space utilization and facilitating easier integration into tight spaces.

No. of Terminals: 56

With 56 terminals, this MOSFET gate driver offers a wide range of connection options, enhancing flexibility and enabling customization based on specific needs.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

This gate driver's chip carrier package style with a heat sink/slug and very thin profile ensures efficient heat dissipation and compactness, ideal for space-constrained applications.

Minimum Supply Voltage: 4.9 V

The low minimum supply voltage of 4.9V allows this gate driver to operate in low-power scenarios, improving efficiency and enabling use in battery-powered applications.

Maximum Operating Temperature: 125 °C

This MOSFET gate driver's high maximum operating temperature of 125°C ensures reliable performance in demanding, high-temperature environments.

Output Characteristics: OPEN-DRAIN

With open-drain output characteristics, this gate driver allows for flexible interfacing with various external circuitry, enabling compatibility with different systems.

Minimum Operating Temperature: -40 °C

The gate driver's wide minimum operating temperature range of -40°C ensures reliable functionality even in extremely cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent corrosion resistance, ensuring long-term reliability and high electrical conductivity.

Terminal Position: QUAD

The quad terminal position allows for easy and secure connections, preventing accidental disconnections and providing stability during operation.

Maximum Seated Height: 1 mm

With a compact maximum seated height of 1mm, this gate driver saves space and allows for more flexible PCB layout design.

Width: 8 mm

The gate driver's width of 8mm ensures a compact form factor, enabling easy integration into space-constrained applications.

Output Polarity: TRUE

The true output polarity of this gate driver ensures accurate and reliable signal generation, adding stability to the system it is integrated into.

High Side Driver: YES

The inclusion of a high-side driver in this MOSFET gate driver allows for efficient power delivery and control, making it suitable for applications requiring high-side switching capability.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this gate driver can withstand high-temperature soldering processes, ensuring ease of assembly in manufacturing.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C enables compatibility with lead-free soldering processes, meeting modern industry standards.

Length: 8 mm

With a length of 8mm, this gate driver offers a compact form factor, allowing for flexible placement on the PCB.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that this gate driver is designed to withstand the demanding temperature requirements of automotive applications.

Terminal Form: NO LEAD

The no-lead terminal form ensures easy soldering and reliable electrical connections, enhancing overall product quality and ease of use.

Maximum Supply Current: 15.5 mA

This gate driver's maximum supply current of 15.5mA ensures efficient power consumption, reducing energy waste and enabling use in low-power applications.

Input Characteristics: STANDARD

With standard input characteristics, this gate driver provides compatibility with a wide range of control signals, making it versatile and suitable for various applications.

Nominal Supply Voltage: 13.5 V

The nominal supply voltage of 13.5V offers a stable power source for this MOSFET gate driver, ensuring consistent and reliable operation.

Turn-on Time: 0.85 us

The fast turn-on time of 0.85μs enables quick switching and precise control, enhancing overall system responsiveness and efficiency.

Terminal Pitch: 0.5 mm

With a small terminal pitch of 0.5mm, this gate driver facilitates high-density PCB designs, allowing for more compact and miniaturized electronic systems.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level 3 ensures proper handling, storage, and operation of this gate driver, reducing the risk of moisture-related damage during the manufacturing process.

Nominal Output Peak Current Limit: 0.062 A

This gate driver's nominal output peak current limit of 0.062A ensures reliable and safe operation within specified current limits, extending the lifespan of the connected components.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge-based MOSFET driver interface IC type provides efficient control and driving capabilities for half bridge configurations, making it a suitable choice for various power applications.

Turn-off Time: 0.6 us

The fast turn-off time of 0.6μs allows for quick switching and precise control, minimizing power loss and maximizing system efficiency.

Technical Specifications

MOSFET Gate Drivers DRV8714SQRVJRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N56

JESD-609 Code:

e4

Length:

8 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

56

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC56,.31SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

15.5 mA

Maximum Supply Voltage:

37 V

Minimum Supply Voltage:

4.9 V

Nominal Supply Voltage:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

8 mm

Trade Compliance

DRV8714SQRVJRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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