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DRV8714SQRHARQ1

Texas Instruments

DRV8714SQRHARQ1 by Texas Instruments

DRV8714SQRHARQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and operating temperature range of -40 to 125°C. It features an open-drain output polarity, suitable for automotive applications requiring high side drivers. With a turn-on time of 0.85µs and turn-off time of 0.6µs, it offers precise control in automotive systems.

Median Price

$4.369

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 5,430 parts In-Stock

1+ parts

$4.369

100+ parts

$3.829

1k+ parts

$2.163

10k+ parts

-

5,430

$4.369

$3.829

$2.163

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Mouser Electronics

USA . 3,615 parts In-Stock

1+ parts

$6.420

100+ parts

$4.140

1k+ parts

$3.780

10k+ parts

$3.720

3,615

$6.420

$4.140

$3.780

$3.720

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

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-

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$2.578

2,500

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$2.578

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.885

100+ parts

-

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10

$2.885

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Digiode

USA . 2,230 parts In-Stock

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$4.151

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2,230

$4.151

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Chip Stock

USA . 11,500 parts In-Stock

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Vyrian

USA . 4,172 parts In-Stock

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4,172

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,388 parts In-Stock

1+ parts

$2.190

100+ parts

-

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4,388

$2.190

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Argo Parts USA

USA . 213 parts In-Stock

1+ parts

$2.885

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213

$2.885

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Continental Prestige Electronics

USA . 40 parts In-Stock

1+ parts

$2.885

100+ parts

-

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10k+ parts

$2.827

40

$2.885

-

-

$2.827

Corphita

USA . 546 parts In-Stock

1+ parts

$3.932

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546

$3.932

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Parana Technologies

USA . 1,071 parts In-Stock

1+ parts

$5.288

100+ parts

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$5.916

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1,071

$5.288

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$5.916

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ChromeModa Solutions

Germany . 6,862 parts In-Stock

1+ parts

$5.942

100+ parts

$4.872

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6,862

$5.942

$4.872

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IDEA Electronic Components Group

UK . 1,391 parts In-Stock

1+ parts

$5.942

100+ parts

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1k+ parts

$5.348

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1,391

$5.942

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$5.348

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Corohmni

South Africa . 61 parts In-Stock

1+ parts

$8.878

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61

$8.878

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Lixinc

USA . 18,673 parts In-Stock

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Component Connect

USA . 9,741 parts In-Stock

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9,741

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DigiPath Technology Company

USA . 2,172 parts In-Stock

1+ parts

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$5.357

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2,172

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$5.357

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$2.827

1k+ parts

$2.740

10k+ parts

$2.683

2,000

-

$2.827

$2.740

$2.683

Overview

Looking for a high-quality MOSFET gate driver that offers reliability and performance? Look no further than the DRV8714SQRHARQ1 by Texas Instruments. With a wide operating temperature range and automotive-grade screening, this chip carrier package delivers exceptional value and benefits to customers. Perfect for applications requiring true output polarity and high side drivers, this square-shaped driver boasts fast turn-on and turn-off times, making it ideal for a variety of industrial and automotive settings. Trust Texas Instruments for top-notch quality and cutting-edge technology in every product they offer. Experience the difference with the DRV8714SQRHARQ1 today!

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable.

Surface Mount YES

Being surface mountable allows for easy and efficient PCB assembly.

Maximum Supply Voltage 37 V

The high maximum supply voltage ensures compatibility with a wide range of applications.

Screening Level AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making it suitable for automotive applications.

Package Shape SQUARE

The square package shape allows for easy integration into circuit designs.

No. of Terminals 40

Having 40 terminals provides flexibility in connecting the gate driver to external components.

Package Style (Meter) CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The chip carrier, heat sink/slug, and very thin profile package style helps in heat dissipation and space-saving.

Minimum Supply Voltage 4.9 V

The low minimum supply voltage allows for operation in a wide range of voltage conditions.

Maximum Operating Temperature 125 °C

The high maximum operating temperature ensures reliable performance even in harsh environments.

Output Characteristics OPEN-DRAIN

The open-drain output characteristics simplify interfacing with external devices.

Minimum Operating Temperature -40 °C

The low minimum operating temperature allows for use in extreme cold conditions.

Terminal Finish NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent corrosion resistance and ensures long-term reliability.

Terminal Position QUAD

The quad terminal position allows for convenient PCB layout and board assembly.

Maximum Seated Height 1 mm

The low maximum seated height contributes to a compact overall design.

Width 6 mm

The 6mm width makes the gate driver suitable for applications with space constraints.

Output Polarity TRUE

The true output polarity ensures accurate signal transmission to connected devices.

High Side Driver YES

The presence of a high side driver allows for efficient and reliable control of high-side MOSFETs in the circuit.

Maximum Time At Peak Reflow Temperature (s) 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering during assembly.

Peak Reflow Temperature °C 260

The peak reflow temperature of 260°C is within standard reflow soldering limits, ensuring proper assembly.

Length 6 mm

The 6mm length contributes to the compact form factor of the gate driver.

Temperature Grade AUTOMOTIVE

The automotive-grade temperature ensures reliable performance in automotive applications.

Terminal Form NO LEAD

The no-lead terminal form simplifies the manufacturing process and enhances reliability.

Maximum Supply Current 15.5 mA

The maximum supply current of 15.5 mA ensures efficient power consumption during operation.

Input Characteristics STANDARD

Standard input characteristics make the gate driver compatible with a wide range of control signals.

Nominal Supply Voltage 13.5 V

The nominal supply voltage of 13.5 V provides a stable operating voltage for the gate driver.

Turn-on Time 0.85 us

The fast turn-on time of 0.85 microseconds ensures quick response in switching operations.

Terminal Pitch 0.5 mm

The 0.5mm terminal pitch allows for high-density mounting on PCBs.

Moisture Sensitivity Level (MSL) 3

The MSL 3 rating indicates the gate driver's tolerance to moisture during storage and handling.

Nominal Output Peak Current Limit 0.062 A

The nominal output peak current limit ensures safe operation of the connected MOSFETs.

Interface IC Type HALF BRIDGE BASED MOSFET DRIVER

The half-bridge based MOSFET driver interface provides efficient control of power semiconductor devices in various applications.

Turn-off Time 0.6 us

The fast turn-off time of 0.6 microseconds ensures quick switching and performance of the gate driver.

Technical Specifications

MOSFET Gate Drivers DRV8714SQRHARQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N40

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC40,.24SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

15.5 mA

Maximum Supply Voltage:

37 V

Minimum Supply Voltage:

4.9 V

Nominal Supply Voltage:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

6 mm

Trade Compliance

DRV8714SQRHARQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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